Composite film plating device

Abstract

The invention discloses a composite film plating device which comprises a vacuum chamber and a workpiece rotating frame located in the vacuum chamber. An ion beam source, a pulsed arc ion source and amagnetic filtering arc ion source are integrated in the vacuum chamber. The ion beam source is used for cleaning a workpiece or assisting deposition. The pulsed arc ion source is used for exciting agraphite target material to generate carbon ions and deposit a Ta-C carbon film. The magnetic filtering arc ion source is used for exciting the metal target material, generating metal ions and depositing a metal film, an alloy film or a compound film. According to the device, the ion beam technology, the magnetic filtering ion plating technology and the pulse ion plating technology are integratedin one vacuum chamber, multiple film plating modes are provided, multifunctional and structural advanced film preparation is achieved, and the device has the characteristics of being rich in functionand high in expansibility and is suitable for developing scientific research and diversified production in the industrial field. Particularly, the Ta-C carbon film which is low in stress, high in bonding strength and adjustable in structure and performance can be efficiently prepared by utilizing the device.

Description

technical field [0001] The invention belongs to the technical field of vacuum coating, and in particular relates to a composite coating device. Background technique [0002] Tetrahedral amorphous carbon Ta-C carbon film has extremely high hardness and low friction coefficient, and is an anti-wear film widely used in machinery, electronics, textiles, automobiles, aerospace and other fields. However, the Ta-C carbon film has high residual stress, low toughness, and high brittleness, resulting in poor bonding strength between the film and the substrate, and easy to fall off during use, which limits the deposition thickness and application of diamond-like carbon. With the continuous development of thin film preparation technology, analysis and testing methods and nanotechnology, people's understanding of the structure and performance of traditional thin films is deepening. Multi-layered development. Using a variety of technology integration to prepare a multi-layer composite s...

AI Technical Summary

Problems solved by technology

Although the DC arc ion plating technology has a high ionization rate and deposition rate, it will bring large particle pollution and affect the quality of the Ta-C carbon film; although the magnetic filter arc ion plating technology can filter out large particles, it will reduce The rate of the deposition process leads to lower target utilization and coating efficiency; although the sputtering technology has fewer large particles, the target utilization is low, the ionization rate is low, and the coating rate is low; the above three technologies cannot Precisely control the energy of carbon ions to realize the adjustable structure and performance of Ta-C carbon film

[0005] (2) The transition layer is mainly prepared by sputtering or DC arc technology. The target ionization rate of sputtering technology is usually less than 40%, and the deposition rate is low. DC arc technology will inevitably bring large particle pollution

[0006] Combining the above technologies for preparing Ta-C carbon film and transition layer for preparing Ta-C carbon film and its composite film cannot precisely control the structure and performance of Ta-C carbon film, and often has low production efficiency, Poor film quality and complex equipment structure

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