Inverted-structure quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting, inverted structure technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as difficulty in obtaining an ordered, high-quality thin-film modification layer, and improve charge balance and performance. , the effect of increasing the probability of radiation recombination

Inactive Publication Date: 2021-03-16
FUZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an inverted structure quantum dot light-emitting diode and its preparation method, which aims to solve the problem that the existing preparation method is difficult to obtain a high-quality thin film modification layer that can precisely control the thickness and molecular orderly arrangement

Method used

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  • Inverted-structure quantum dot light-emitting diode and preparation method thereof
  • Inverted-structure quantum dot light-emitting diode and preparation method thereof
  • Inverted-structure quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0038] The present invention provides a method for preparing a quantum dot light-emitting diode based on the above-mentioned inverted structure, comprising the following steps:

[0039] Step S1, preparing the substrate;

[0040] Step S2, preparing an electron transport layer on the substrate;

[0041] Step S3, preparing an LB film modification layer on the electron transport layer; the specific preparation method is as follows:

[0042] S31. Dissolving the organic polymer in an organic solvent to form an organic polymer solution;

[0043] S32. Use a micropipette to evenly distribute and drop the organic polymer solution on the subphase / air interface, let it spread automatically, wait for the organic solvent to volatilize for 5-20 minutes, and use the LB film pulling machine to pull to obtain a single layer of orderly organic polymer films;

[0044] S33. Repeat steps S31 and S32 to obtain organic polymer films of different thicknesses, that is, the LB film modification layer...

Embodiment 1

[0053] Such as figure 1 Shown is a schematic structural view of an embodiment of an inverted structure quantum dot light-emitting diode provided by the present invention; the QLED device includes a substrate 100, a cathode layer 110, an electron transport layer 120, an LB film modification layer 130, a quantum dot light-emitting layer 140, a space The hole transport layer 150 , the hole injection layer 170 and the anode layer 180 . Its concrete preparation steps are:

[0054] Step 1: Pretreatment of the ITO glass substrate 100 .

[0055] The substrate 100 is made of glass, the cathode layer 110 is a transparent conductive electrode, and an ITO conductive film prepared by magnetron sputtering; the substrate 100 with ITO is ultrasonically cleaned with deionized water, acetone, and ethanol for 10-20 minutes in sequence, and placed Dry it in a vacuum drying oven for 0.5-1 hour for later use, and perform plasma treatment on the substrate 100 before use;

[0056] Step 2: Preparat...

Embodiment 2

[0070] The preparation process of a quantum dot light-emitting diode with an inverted structure is consistent with that of Example 1, except that a hole transport layer 160 is deposited again on the hole transport layer 150, and all the hole transport layers 150, hole transport Layer 160, hole injection layer 170, and anode layer 180 are all prepared by vacuum evaporation. Its step 1, step 2, step 3, step 4 are identical with embodiment 1, and all the other steps are as follows:

[0071] Step 5: Preparation of the first hole transport layer 150 .

[0072] A hole transport layer 150 is deposited on the quantum dot light-emitting layer 140, the material used is NPB, and the deposition method is an evaporation method. The evaporation rate is controlled to be 1-4 angstroms / second, and the thickness is 10-20nm.

[0073] Step 6: Preparation of the second hole transport layer 160 .

[0074] A hole transport layer 160 is deposited on the first hole transport layer 150, the material...

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Abstract

The invention relates to an inverted structure quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode adopts a planar layered multi-film structure andcomprises a substrate, a cathode layer, an electron transport layer, an LB film modification layer, a quantum dot light-emitting layer, a hole transport layer, a hole injection layer and an anode layer, wherein the LB film modification layer is an organic polymer film prepared by using an LB film drawing machine, and interface modification is carried out on the electron transport layer/quantum dotlight emitting layer by using the LB film modification layer. The LB film modification layer is an organic polymer film prepared by using an LB film drawing machine, has the advantages of simple preparation method, ordered arrangement of polymer molecules, accurate and controllable film thickness and the like, and can realize the control of the number of layers of the organic polymer LB film by repeating the LB film drawing step. The high-quality LB film is used as an interface modification layer of a device, so that electron injection can be accurately limited, charge balance is further improved, defects at an interface can be passivated, the radiation recombination efficiency is improved, and the performance of the quantum dot light emitting diode is effectively improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an inverted structure quantum dot light emitting diode and a preparation method thereof. Background technique [0002] In recent years, quantum dots have attracted great attention in the field of display due to their significant advantages such as high fluorescence yield, high color purity, and adjustable color. Quantum dot-based light-emitting diodes are easy to prepare using a solution method, which has the advantages of simple process and low cost. [0003] After years of research, it has been found that the mechanisms that affect the device performance in quantum dot light-emitting diodes mainly include charge injection imbalance and non-radiative recombination at the interface. If a suitable modification layer is introduced into the device structure, it can not only limit the excess charge injection, but also passivate the defects at the interface, reduce the non-radiative...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/115H10K50/16H10K71/00
Inventor 李福山井继鹏胡海龙赵等临杨开宇郭太良
Owner FUZHOU UNIV
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