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Method for constructing periodic strip domain in ferroelectric film by using pinpoint electric field

A ferroelectric thin film and periodic technology, which is applied in the field of constructing periodic strip domains to achieve the effects of simple design, good stability and efficient preparation

Pending Publication Date: 2021-03-09
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Purpose of the invention: Aiming at the problem of storage density faced by ferroelectric random access memory, the purpose of the invention is to provide a method for constructing periodic strip domains in ferroelectric thin films by using needle tip electric field

Method used

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  • Method for constructing periodic strip domain in ferroelectric film by using pinpoint electric field
  • Method for constructing periodic strip domain in ferroelectric film by using pinpoint electric field
  • Method for constructing periodic strip domain in ferroelectric film by using pinpoint electric field

Examples

Experimental program
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Effect test

Embodiment 1

[0046] The selected film corresponds to sample 1 ( figure 2 a, b), below, with image 3 This embodiment will be described in detail in combination.

[0047] According to step S3, the initial state of the ferroelectric thin film is characterized by the vector PFM method, and the out-of-plane ( image 3 a,c) and in-plane ( image 3 b, d) PFM diagrams. From the single contrast of the out-of-plane phase map, it can be seen that the polarization has a unified orientation, and the out-of-plane phase map written in combination with the tip bias (+8V) ( image 3 c), it can be determined that the out-of-plane initial polarization of the film points upward uniformly, indicating that the growth rate of the bottom electrode is slightly faster under the condition of low oxygen pressure, because SrRuO 3 Generally considered to have metallic conductivity, the spontaneous polarization direction of the ferroelectric layer grown on it should point downward. From the in-plane PFM phase dia...

Embodiment 2

[0049] The selected film corresponds to sample 2 ( figure 2 c,d), below, with Figure 4 , Figure 5 This embodiment will be described in detail in combination.

[0050] Determine the relative orientation of the sample to the probe cantilever, e.g. Figure 4 As shown in a, the eight polarizations of the corresponding lattice point at Figure 4 given in d. According to step S4, a rectangular pattern is written in the film, the tip bias voltage is -4V, and the scanning direction of the tip is as follows: Figure 4 Shown by the white broken line in e. The vector PFM method is used to characterize the ferroelectric thin film, and the read area is much larger than the write area, in order to give the spontaneous growth ( Figure 4 The domain structure (step S3) of the region outside the middle white rectangle frame); the region outside the rectangle frame, the out-of-plane PFM phase map ( Figure 4 e) is the contrast between light and dark. It can be seen that the polarizati...

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Abstract

The invention discloses a method for constructing a periodic strip domain in a ferroelectric film by using a pinpoint electric field, belongs to the technical field of micro-nano structures, and aimsto grow a bismuth ferrite film by using a pulsed laser deposition technology and ensure that the film contains defects under a low-oxygen-pressure growth condition. The pinpoint electric field is generated by applying bias voltage to a pinpoint of the piezoelectric force microscope; the out-of-plane polarization and the in-plane polarization in the thin film are turned over and redirected at the same time under the action of a needle point electric field, and a nanoscale high-density periodic strip domain is formed; and the constructed strip domain has good stability and can be used for a high-density ferroelectric random access memory. According to the preparation method, the pulse laser deposition technology is mature, the vector piezoelectric force microscopy technology based on the scanning probe microscope is easy to operate, and good practicability is achieved.

Description

technical field [0001] The invention belongs to the technical field of micro-nano structures, and in particular relates to a method for constructing periodic strip domains in a ferroelectric thin film by using a needle tip electric field. Background technique [0002] In recent years, as people's requirements for device miniaturization have become stronger, the market has shown eager expectations for materials with multiple functions. Single-phase multiferroic materials are representative of such multifunctional materials. The so-called multiferroic material is a material that has both ferroelectricity and magnetism. More importantly, the magnetism of the material can be reliably controlled by applying an electric field or the ferroelectricity of the material can be reliably controlled by applying a magnetic field, so it is also called magnetoelectric coupling. Material. Ferroelectric memory has low power consumption, fast writing, and much larger erasing times (3.3V excee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H10N50/01
CPCH10N50/01
Inventor 李忠文申慧王延宗宋光李冠男张正中
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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