Al2O3/ZrN double-layer diffusion barrier layer for copper interconnection line and preparation method thereof

A technology of barrier layer and copper interconnect, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, electrical components, etc. Barrier properties, improved interfacial bonding, reduced effects of copper wiring resistance increase

Pending Publication Date: 2021-01-19
XIAN UNVERSITY OF ARTS & SCI +1
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Problems solved by technology

However, the binary nitride is prone to recrystallization at moderate temperatures (about 600 °C), which promotes the diffusion of Cu atoms. In addition, the bonding of ZrN to the silicon substrate is poor, and it is prone to exfoliation at higher temperatures, which limits the use of ZrN on copper. Application in Interconnect Technology

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  • Al2O3/ZrN double-layer diffusion barrier layer for copper interconnection line and preparation method thereof
  • Al2O3/ZrN double-layer diffusion barrier layer for copper interconnection line and preparation method thereof
  • Al2O3/ZrN double-layer diffusion barrier layer for copper interconnection line and preparation method thereof

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Embodiment Construction

[0027] The present invention is described in further detail below in conjunction with accompanying drawing:

[0028] A kind of Al for copper interconnection wire 2 o 3 / ZrN bilayer diffusion barrier preparation method, comprising the following steps:

[0029] Step 1), the substrate is cleaned and pretreated; specifically, the substrate is sequentially placed in acetone and ethanol for ultrasonic cleaning, and then soaked in HF solution to remove the oxide layer on the surface of the substrate to remove organic pollution on the surface of the silicon chip material to improve the binding force of the membrane base; where the concentration of acetone solution is greater than 99.9%; the concentration of ethanol solution is greater than 99.9%, and finally 5% HF solution is used to remove the oxide layer on the surface.

[0030] Step 2), preparing a layer of Al on the surface of the substrate after cleaning and pretreatment 2 o 3 transition layer;

[0031] Specifically, the at...

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Abstract

The invention discloses an Al2O3 / ZrN double-layer diffusion barrier layer for a copper interconnection line and a preparation method thereof. The method comprises the following steps: depositing cleaning and impurity removal pretreatment on a substrate subjected to cleaning and impurity removal pretreatment, then depositing a ZrN barrier layer on the surface of an Al2O3 transition layer to form adouble-layer structure, and preparing an ultrathin Al2O3 transition layer between the ZrN barrier layer and a silicon substrate, so the diffusion barrier performance of the ZrN barrier layer materialcan be effectively improved, copper wiring resistance increase caused by the size effect can be reduced, interface bonding of the ZrN barrier layer and the silicon substrate can be obviously improvedby utilizing the amorphous structure of the Al2O3 transition layer formed through deposition, the Al2O3 / ZrN double-layer barrier layer with the amorphous structure has high thermal stability, and theCu atom diffusion resistance is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and in particular relates to an Al 2 o 3 / ZrN bilayer diffusion barrier layer and its preparation method. Background technique [0002] At present, the copper interconnection of integrated circuits mainly adopts Ta / TaN double-layer barrier layer, in which TaN is used as the barrier layer and Ta is used as the adhesion layer, which has high thermal stability and good barrier performance. However, the coverage uniformity of Ta deposition is not good, it is easy to cause the blockage of the wire groove, the rear end leads to difficulties in copper plating, and it is easy to generate holes, which seriously affects the circuit performance. In addition, the inhomogeneity of Ta tends to cause most of the trench filling material to be Ta instead of Cu, because the resistance value of the Ta metal wire will increase significantly, offsetting the benefits...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/02H01L23/538
CPCH01L21/76832H01L23/5386H01L21/76829H01L21/022H01L21/02178H01L21/02189H01L21/02266H01L21/0228
Inventor 孟瑜宋忠孝李龙畅庚榕王小艳
Owner XIAN UNVERSITY OF ARTS & SCI
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