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Alternating-current driving type quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and AC-driven technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of reduced light-emitting performance of quantum dot light-emitting diodes, and achieve improved light-emitting performance, sufficient recombination, and increased transmission density. Effect

Active Publication Date: 2021-01-05
JIANGHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide an AC-driven quantum dot light-emitting diode and its preparation method, which is used to solve the problem that the quantum dot light-emitting diode is generally a DC-driven device in the prior art, and the surface defect state of the inorganic quantum dot causes the The Problem of Luminous Performance Reduction of Quantum Dot Light-Emitting Diodes

Method used

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  • Alternating-current driving type quantum dot light-emitting diode and preparation method thereof
  • Alternating-current driving type quantum dot light-emitting diode and preparation method thereof
  • Alternating-current driving type quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0026] For the second solution proposed by the present invention, see figure 2 , is a process flow chart of an embodiment of the method for preparing an AC-driven quantum dot light-emitting diode in the present invention. The preparation method of the AC-driven quantum dot light-emitting diode in the present invention, the preparation method is used to prepare the AC-driven quantum dot light-emitting diode in the aforementioned first solution, and the steps include:

[0027] S1: Anode substrate pretreatment. In this step, the anode substrate is preferably one or more of ITO conductive glass, FTO conductive glass, ITO-PET or FTO-PET, and the anode substrate is ultrasonically cleaned with acetone, deionized water and absolute ethanol in sequence and dried for later use , and UV-ozone treatment is performed before the dielectric layer is deposited.

[0028]S2: Depositing a dielectric layer on the anode substrate. In this step, the material used for the dielectric layer is pre...

Embodiment 1

[0034] The specific steps for preparing an AC-driven quantum dot light-emitting diode in this embodiment are as follows:

[0035] (1) Select the ITO substrate as the anode substrate, ultrasonically clean the ITO substrate with acetone, deionized water and absolute ethanol, dry it and place it in a clean environment for use, and perform UV-ozone treatment before depositing the hole injection layer.

[0036] (2) Immediately after the UV-ozone treatment, PEDOT:PSS (PEDOT is a polymer of 3,4-ethylenedioxythiophene monomer, and PSS is polystyrene sulfonate) was mixed with a homogenizer at 5000 rpm Spin coating at a rotational speed for 30 seconds to form a film, and then perform annealing at a temperature of 150° C. for 10 minutes to form a hole injection layer.

[0037] (3) Take TFB (TFB is 1,2,4,5-tetrakis(trifluoromethyl)benzene) as the solute and chlorobenzene as the solvent, mix to obtain a 10mg / mL TFB solution, and then use a homogenizer at 3000 Spin coating at a speed of rp...

Embodiment 2

[0042] The specific steps for preparing an AC-driven quantum dot light-emitting diode in this embodiment are as follows:

[0043] (1) Select the ITO substrate as the anode substrate, ultrasonically clean the ITO substrate with acetone, deionized water and absolute ethanol, dry it and place it in a clean environment for use, and perform UV-ozone treatment before depositing the hole injection layer.

[0044] (2) Using P(VDF-TrFE-CFE) as the solute and dimethylformamide as the solvent, mix to obtain a mixed solution with a concentration of 100mg / mL, use a homogenizer to spin coat at a speed of 1500 rpm for 30s to form a film, and then Anneal at 100° C. for 30 minutes to form a dielectric layer.

[0045] (3) PEDOT:PSS was spin-coated at 5000 rpm for 30s to form a film, and then annealed at 150°C for 10 minutes to form a hole injection layer.

[0046] (4) Using TFB as the solute and chlorobenzene as the solvent, mix to obtain a 10 mg / mL TFB solution, then use a homogenizer to spin...

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Abstract

The invention discloses an alternating-current driving type quantum dot light emitting diode and a preparation method thereof. The alternating-current driving type quantum dot light emitting diode comprises an anode substrate, a dielectric layer, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a metal cathode layer which are sequentially arranged in a stacked mode; the quantum dot light-emitting layer is a blended film prepared from a quantum dot solution and an organic insulating polymer solution. By introducing the dielectric layer, carriers from electrodes are effectively blocked and stored, and charges injected into the device are regulated and controlled along with frequency conversion of alternating voltage, so thatthe device can normally work under the driving of the alternating voltage without adding an alternating current-direct current conversion device; by introducing the organic insulating polymer into thequantum dot light-emitting layer, defects on the surfaces of quantum dots are passivated, so that the carrier transport density is remarkably improved, electrons and holes are compounded more sufficiently, and the light-emitting performance of the light-emitting diode is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor display, in particular to an AC-driven quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dots (QDs for short) refer to solid materials whose size is at the nanoscale in three dimensions. Its emission spectrum can be controlled by changing its size and composition elements. Therefore, changing the size of the quantum dot and its chemical composition can make it emit light covering the entire visible light region. Moreover, quantum dots have the advantages of high luminous efficiency and good stability, and have attracted extensive attention from researchers in the field of display. [0003] Quantum dot light-emitting diode (QLED for short) is an electroluminescent diode device with QDs as the light-emitting layer. It has a series of advantages such as high brightness, controllable band gap, and low energy consumption, and has attracted ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/18H10K2102/00H10K71/00
Inventor 肖标张明睿尤庆亮郭丰钟天
Owner JIANGHAN UNIVERSITY
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