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Method for covalently grafting dielectric film on surface of semiconductor

A surface covalent, dielectric film technology, applied in the field of materials, can solve problems such as low dielectric constant, and achieve the effects of preventing strong corrosion, controllable composition, and controllable film thickness

Pending Publication Date: 2020-12-18
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, HF is highly corrosive. When some special monomers are used to prepare an insulating layer with high strength, high heat dissipation, and low dielectric constant performance, HF may be harmful to these monomers (such as those containing Si-O bonds). monomer) is corrosive, which is also the limitation of HF

Method used

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  • Method for covalently grafting dielectric film on surface of semiconductor
  • Method for covalently grafting dielectric film on surface of semiconductor
  • Method for covalently grafting dielectric film on surface of semiconductor

Examples

Experimental program
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Effect test

Embodiment 1

[0035]This embodiment relates to a method for covalently grafting a dielectric film on the surface of a semiconductor based on diazonium salt technology. The semiconductor substrate can be silicon, germanium, or gallium arsenide (specifically, silicon is selected as the substrate in this embodiment). Specific implementation steps as follows:

[0036]Step (1): Using acetone, alcohol and deionized water to ultrasonically clean the semiconductor substrate in sequence at a temperature of 20°C, each cleaning time is 5 minutes;

[0037]Step (2): Place the cleaned semiconductor substrate in a 3v% HF solution at a temperature of 20°C for a immersion time of 1 min;

[0038] Step (3): At a temperature of 20℃, directly immerse the corroded semiconductor surface in the configured chemical solution ① for surface passivation. The immersion time is 30s, so that the semiconductor surface is transformed into a passivation layer surface, thereby preventing the semiconductor The surface is oxidized in the nex...

Embodiment 2

[0044]This embodiment relates to a method for covalently grafting a dielectric film on the surface of a semiconductor based on diazonium salt technology. The semiconductor substrate is silicon. The specific implementation steps are as follows:

[0045]Step (1): Using acetone, alcohol and deionized water to ultrasonically clean the semiconductor substrate in sequence at a temperature of 20°C, each cleaning time is 5 minutes;

[0046]Step (2): Place the cleaned semiconductor substrate in a 0.5v% HF solution at a temperature of 20°C, and the immersion time is 10 minutes;

[0047]Step (3): Under the condition of temperature 20℃, directly immerse the corroded semiconductor surface in the configured chemical solution ① for surface passivation. The immersion time is 30s, so that the semiconductor surface is transformed into the surface of the passivation layer, thereby preventing the semiconductor The surface is oxidized in the next reaction;

[0048]The configuration process of the chemical solution ...

Embodiment 3

[0053]This embodiment relates to a method for covalently grafting a dielectric film on the surface of a semiconductor based on diazonium salt technology. The semiconductor substrate is silicon. The specific implementation steps are as follows:

[0054]Step (1): Using acetone, alcohol and deionized water to ultrasonically clean the semiconductor substrate in sequence at a temperature of 20°C, each cleaning time is 5 minutes;

[0055]Step (2): Place the cleaned semiconductor substrate in a 5% volume fraction HF solution at a temperature of 20°C for a immersion time of 1 min;

[0056]Step (3): Under the condition of temperature 20℃, directly immerse the corroded semiconductor surface in the configured chemical solution ① for surface passivation. The immersion time is 1 min, so that the semiconductor surface is transformed into the surface of the passivation layer, thereby preventing the semiconductor The surface is oxidized in the next reaction;

[0057]The configuration process of the chemical so...

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Abstract

The invention discloses a method for covalently grafting a dielectric film on the surface of a semiconductor. The method comprises the steps that a passivation layer is chemically grafted to the surface of a semiconductor through the diazonium salt technology in the atmospheric environment, the component of the passivation layer is an organic polymer of diazonium salt, the thickness of the passivation layer is controllable, and the passivation layer aims to prevent an H-passivated surface from being oxidized and serve as an intermediate layer of a grafted dielectric film; and the dielectric film layer is electrically grafted on the surface by utilizing the diazonium salt technology in an atmospheric environment. The method can be completely carried out in an atmospheric environment, inertgas atmosphere protection is not needed, any soluble vinyl monomer can be grafted, and especially F ions can be prevented from corroding the monomer and damaging certain covalent bonds. The method iswide in applicability, low in cost and suitable for the field of semiconductor manufacturing and industrial production.

Description

Technical field[0001]The invention belongs to the technical field of materials, and relates to a method for covalently grafting a dielectric film on the surface of a semiconductor, in particular to a method for covalently grafting a dielectric film on the surface of a semiconductor with monomers that can be corroded by F ions.Background technique[0002]With the rapid development of the information society, the needs of the electronics industry with higher density, higher integration, and lower power consumption pose new challenges to the semiconductor manufacturing industry. In 1965, Intel founder GordonMoore put forward the famous Moore's Law: The number of components that can be accommodated on an integrated circuit will double about every 18-24 months, and the performance will also double. Moore's Law has been developed for more than half a century. In the post-Moore's Law era, it is facing the upper limit of Moore's Law, the limit of chip size, heat dissipation problems, material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02118H01L21/02282
Inventor 曹亮亮吴蕴雯李明
Owner SHANGHAI JIAO TONG UNIV
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