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NiFe2O4/SiC-based ultraviolet photodiode and preparation method thereof

A diode and ultraviolet light technology, used in circuits, electrical components, semiconductor devices, etc., can solve the problem of low P-type silicon carbide doping concentration, and achieve high critical breakdown electric field strength, large forbidden band width, and high withstand voltage. horizontal effect

Active Publication Date: 2020-12-11
西安千月电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, the P-type doping of silicon carbide is doped with Al. Since Al has a high ionization energy at room temperature, it cannot be completely ionized at room temperature, resulting in a low doping concentration of P-type silicon carbide.

Method used

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  • NiFe2O4/SiC-based ultraviolet photodiode and preparation method thereof
  • NiFe2O4/SiC-based ultraviolet photodiode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0045] The present invention is based on a NiFe 2 o 4 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0046] Step 1. Clean the N-type SiC substrate, and dry it for later use;

[0047] The cleaning process in step 1 is: cleaning the N-type SiC substrate step by step with cleaning solution, 40% hydrofluoric acid solution, alcohol, and deionized water in sequence.

[0048] Step 2, growing an intrinsic 4H-SiC homoepitaxial layer on the N-type SiC substrate cleaned in the step 1;

[0049] In step 2, when the intrinsic 4H-SiC homoepitaxial layer is grown on the N-type SiC substrate, chemical vapor deposition equipment is used, silane is used as the Si source gas, propane is used as the C source gas, and hydrogen is used as the carrier gas, wherein the hydrogen The flow rate is 40-60slm, the C / Si ratio is 1:1, the growth temperature is 1520°C, and the growth time is 2min.

[0050] Step 3, performing P-...

Embodiment 2

[0057] The present invention is based on a NiFe 2 o 4 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0058] Step 1. Clean the N-type SiC substrate, and dry it for later use;

[0059] The cleaning process in step 1 is: cleaning the N-type SiC substrate step by step with cleaning solution, 40% hydrofluoric acid solution, alcohol, and deionized water in sequence.

[0060] Step 2, growing an intrinsic 4H-SiC homoepitaxial layer on the N-type SiC substrate cleaned in the step 1;

[0061] In step 2, when the intrinsic 4H-SiC homoepitaxial layer is grown on the N-type SiC substrate, chemical vapor deposition equipment is used, silane is used as the Si source gas, propane is used as the C source gas, and hydrogen is used as the carrier gas, wherein the hydrogen The flow rate is 40-60slm, the C / Si ratio is 3:2, the growth temperature is 1600°C, and the growth time is 5min.

[0062] Step 3, performing P-...

Embodiment 3

[0069] The present invention is based on a NiFe 2 o 4 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0070] Step 1. Clean the N-type SiC substrate, and dry it for later use;

[0071] The cleaning process in step 1 is: cleaning the N-type SiC substrate step by step with cleaning solution, 40% hydrofluoric acid solution, alcohol, and deionized water in sequence.

[0072] Step 2, growing an intrinsic 4H-SiC homoepitaxial layer on the N-type SiC substrate cleaned in the step 1;

[0073] In step 2, when the intrinsic 4H-SiC homoepitaxial layer is grown on the N-type SiC substrate, chemical vapor deposition equipment is used, silane is used as the Si source gas, propane is used as the C source gas, and hydrogen is used as the carrier gas, wherein the hydrogen The flow rate is 50slm, the C / Si ratio is 2.5:2, the growth temperature is 1580°C, and the growth time is 4min.

[0074] Step 3, performing P-t...

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Abstract

The invention discloses a NiFe2O4 / SiC-based ultraviolet photodiode, and also discloses a preparation method of the NiFe2O4 / SiC-based ultraviolet photodiode, which comprises the following steps: cleaning an N-type SiC substrate, and blow-drying for later use; then, growing an intrinsic 4H-SiC homogeneous epitaxial layer on the cleaned N-type SiC substrate; growing a P-type NiFe2O4 heteroepitaxial layer on the obtained intrinsic 4H-SiC homoepitaxial layer; preparing a top electrode on the obtained P-type NiFe2O4 heteroepitaxial layer; and manufacturing a bottom electrode on the lower surface ofthe N-type SiC substrate, and finally forming the NiFe2O4 / SiC ultraviolet photodiode. The diode provided by the invention has the advantages of good photoelectric response, good stability, sensitive reaction and good processing technology repeatability.

Description

technical field [0001] The invention belongs to the field of ultraviolet photoelectric detection application technology, in particular to a NiFe-based 2 o 4 / SiC ultraviolet photodiode, the present invention also relates to a NiFe-based 2 o 4 / SiC UV photodiode preparation method. Background technique [0002] Ultraviolet detection technology is one of the photoelectric detection technologies developed rapidly in recent years. Ultraviolet detectors have important uses in missile early warning, water quality monitoring and disaster weather forecasting. Silicon carbide (4H-SiC), as a representative of the third-generation wide bandgap semiconductor material, has properties such as large bandgap, high breakdown electric field, high thermal conductivity, high electron saturation mobility, and small dielectric constant, making it widely used in Ultraviolet photodetection devices, power electronics and lasers have great application potential. [0003] 4H-SiC PIN UV detector ...

Claims

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Application Information

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IPC IPC(8): H01L31/105H01L31/0336H01L31/18
CPCH01L31/105H01L31/0336H01L31/18
Inventor 胡继超许蓓贺小敏王曦李连碧
Owner 西安千月电子科技有限公司
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