Capillary aluminum pipe for high-speed flowing of gallium-based liquid metal containing oxide layer and preparation method thereof

A liquid metal, high-speed flow technology, applied in the field of microelectronics, can solve problems such as failure of aluminum-based heat sink components, catastrophic accidents, and difficulty in normal flow of liquid metal, so as to prevent embrittlement reactions and broaden the scope of application.

Active Publication Date: 2020-12-08
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

However, the gallium-based liquid metal will spontaneously form a continuous oxide film (1-3nm) immediately in an oxygen-containing environment, and the oxide layer will firmly adhere to the solid surface, making it difficult for the liquid metal to flow normally
Not only that, the embrittlement effect caused by the intergranular reaction between gallium-based liquid metal and aluminum and aluminum-based alloy materials will lead to the failure of aluminum-based heat dissipation devices. This embrittlement effect will cause catastrophic accidents in engineering practice

Method used

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  • Capillary aluminum pipe for high-speed flowing of gallium-based liquid metal containing oxide layer and preparation method thereof
  • Capillary aluminum pipe for high-speed flowing of gallium-based liquid metal containing oxide layer and preparation method thereof
  • Capillary aluminum pipe for high-speed flowing of gallium-based liquid metal containing oxide layer and preparation method thereof

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preparation example Construction

[0055] A method for preparing a capillary aluminum tube capable of high-speed flow of a gallium-based liquid metal containing an oxide layer, comprising the following steps:

[0056] (1) Pretreatment of capillary aluminum tube

[0057] After filling the capillary aluminum tube with acetone, seal it, and ultrasonically clean it for 5-10 minutes, with an ultrasonic frequency of 40-60kHz; after pouring out the acetone, inject alcohol, seal it, and ultrasonically clean it for 5-20min, with an ultrasonic frequency of 40-60kHz; after pouring out the alcohol Inject deionized water, seal, and ultrasonically clean for 5-15min at a frequency of 40-60kHz.

[0058] Put the above-mentioned cleaned capillary aluminum tube in an oven at 60-150° C. for drying treatment for 20-120 minutes, and seal it for future use.

[0059] (2) Electrochemical processing of the inner wall of the capillary aluminum tube

[0060] The capillary electrochemical reaction device is used to electrochemically proc...

Embodiment 1

[0084] (1) Pretreatment of capillary aluminum tube

[0085] After filling the capillary aluminum tube with an inner diameter of 200 μm with acetone, seal it, and ultrasonically clean it for 6 minutes at an ultrasonic frequency of 40 kHz; pour out the acetone and inject alcohol, seal it, and ultrasonically clean it for 6 minutes at an ultrasonic frequency of 40 kHz; pour out the alcohol and inject deionized water , sealed, ultrasonic cleaning 8min, ultrasonic frequency 40kHz. The above-mentioned cleaned capillary aluminum tubes were dried in an oven at 60° C. for 30 minutes. Save it for later use.

[0086] The surface microstructure and elemental analysis of the inner wall of the capillary aluminum tube after surface cleaning are as follows: image 3 As shown, the XRD spectrum is as Figure 4 As shown, the corresponding obtained element amounts are shown in Table 1. From image 3 It can be seen from the microstructure of the inner wall surface of the capillary aluminum tub...

Embodiment 2

[0109] (1) Pretreatment of capillary aluminum tube

[0110] A capillary aluminum tube with an inner diameter of 500 μm was used, and the pretreatment parameters and process were the same as in Example 1.

[0111] (2) Electrochemical processing of the inner wall of the capillary aluminum tube

[0112] The electrochemical processing device is the same as that in Example 1.

[0113] The concentration of the electrolyte solution used in electrochemical machining is 0.25mol / L NaCl solution, and the current density is 250mA / cm 2 , the reaction temperature is 25°C, and the reaction time is 15 minutes. After the reaction, inject absolute ethanol into the capillary aluminum tube, seal it, and ultrasonically clean it for 5 minutes, and the ultrasonic frequency is 40kHz; after pouring out the alcohol, inject deionized water, seal it, and ultrasonically clean it 8min, the ultrasonic frequency is 40kHz. Finally, the capillary aluminum tube was dried in an oven at 60 °C for 25 min.

[0...

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Abstract

The invention discloses a capillary aluminum pipe for the high-speed flowing of gallium-based liquid metal containing an oxide layer and a preparation method of the capillary aluminum pipe. The preparation method comprises the following steps: (1) pretreating the capillary aluminum pipe; (2) carrying out electrochemical machining on the inner wall of the capillary aluminum pipe; (3) anodizing theinner wall of the capillary aluminum pipe, wherein the step (2) and the step (3) jointly complete preparation of the surface microstructure of the capillary aluminum pipe, so that regular square grooves are formed in the surface of the inner wall of the capillary aluminum pipe; (4) performing surface modification treatment, and completing the oleophylic decoration of the inner wall of the capillary aluminum pipe, and (5) injecting surface pre-infiltration liquid, and completing the preparation of the ultra-smooth capillary aluminum pipe. According to the invention, the application of gallium and gallium-based liquid metal in the aluminum-based capillary tube is realized, and due to the existence of the surface oxide layer and the pre-injection liquid layer, the driving power consumption during the driving of the liquid metal is effectively reduced, and the direct contact between the gallium-based liquid metal and the capillary aluminum tube is isolated, so that the occurrence of embrittlement reaction is avoided.

Description

technical field [0001] The present invention generally relates to the technical field of microelectronics, in particular to a microchannel cooling device. Background technique [0002] With the vigorous development of the electronic information industry, integrated circuits have developed to the stage of huge scale integration. In integrated circuits, with the continuous reduction of feature size and continuous improvement of performance, the heat production per unit area has also increased dramatically. If the heat cannot be dissipated in time, the electronic equipment will face the danger of heavy heat burden and damage to the device. In order to ensure the normal operation of electronic equipment, the timely transportation of heat from huge-scale integrated circuits, and the improvement of the heat transfer efficiency of small and micro-sized heat exchangers are imminent. In fact, not only integrated chips in electronic equipment, but also urgent heat dissipation requir...

Claims

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Application Information

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IPC IPC(8): H01L23/367H01L23/373H01L23/473H05K7/20C25D11/04C25D11/16
CPCH01L23/367H01L23/3736H01L23/473H05K7/20336C25D11/04C25D11/16
Inventor 赵存陆闫慧龙张文耀崔永赫钱芳王秋旺
Owner XI AN JIAOTONG UNIV
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