Driving integrated circuit of SiC MOSFET switching device

Abstract

The invention relates to a driving integrated circuit of a SiC MOSFET switching device. The driving integrated circuit comprises a voltage amplitude conversion module, an undervoltage protection module, a protection execution module, an output buffer module and a miller platform improvement module. According to the driving integrated circuit, a VGS platform of a power tube in a switching-on process is improved, a VDS descending speed is increased, losses are reduced, a condition that oscillation and overshoot are reduced by sacrificing a switching speed and increasing the switching losses is prevented, and meanwhile current spikes are avoided; and in addition, the driving circuit is designed into an integrated circuit so that a circuit area is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a driving integrated circuit for a SiC MOSFET switching device. Background technique [0002] At present, power electronic devices are mainly based on silicon-based devices. However, due to the narrow bandgap of silicon materials, it is difficult to meet the requirements of the new generation of power systems in terms of blocking voltage, energy consumption, operating temperature and switching frequency, and has become a bottleneck in the development of power electronic systems. In order to solve this contradiction, research on third-generation semiconductor materials is developing rapidly, among which silicon carbide (SiC) material is the most promising material to replace silicon (Si) and become the material of choice for the preparation of a new generation of power semiconductor devices. SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, ox...

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Problems solved by technology

[0004] Takata, Yang Yan, Cheng Ze and others disclosed a silicon carbide MOSFET drive circuit in their patent application document "A Silicon Carbide MOSFET Drive Circuit" (application publication number CN108683327A, application number 201810600993.4, application date 2018.06.12), The PWM (Pulse width modulation, pulse width modulation) control circuit generates a PWM pulse signal. After the PWM pulse signal passes through the driving signal amplification circuit, it passes through the resistor to control the silicon carbide MOSFET switch. The output of the power supply includes +15V, 0V and -3V DC voltage, + The 15V and -3V DC voltages respectively supply power to the drive signal amplifier circuit, and the 0V is connected to the source of the silicon carbide MOSFET; the silicon carbide MOSFET drive circuit can reduce the upper and lower tubes of the bridge arm circuit in the power electronic converter by turning off the driving negative voltage. Crosstalk avoids the straight-through of the bridge arm and improves the reliability of the silicon carbide MOSFET; the diode can clamp the gate voltage to a safe range to avoid breakdown and damage to the gate of the silicon carbide MOSFET; the circuit uses the MOS tube M1 to form a discharge circuit to speed up The turn-off speed of silicon carbide MOSFET improves the switching speed of silicon carbide MOSFET and reduces the switching loss; its disadvantage is that the circuit is built with discrete components, and the circuit area is relatively large; Le effect does not propose corresponding solutions

The disadvantage is that these methods essentially sacrifice switching speed and increase switching loss in exchange for reduction of oscillation and overshoot

[0006] Therefore, the existing silicon carbide MOSFET circuit has the following disadvantages: the circuit area is relatively large; there is Miller effect in the turn-on process of silicon carbide MOSFET; the reduction of oscillation and overshoot is obtained by sacrificing switching speed and increasing switching loss

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