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Semiconductor device and manufacturing method thereof

A semiconductor and conductive layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of improving electronic properties, yield and quality

Pending Publication Date: 2020-11-24
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing semiconductor devices and their formation methods can cope with their original intended use, they still have problems to be overcome in various technical aspects of structure and method.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0045] The following disclosure provides a number of embodiments or examples for implementing different elements of the provided semiconductor devices. Specific examples of each element and its configuration are described below to simplify the description of the embodiments of the present invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if a description mentions that a first element is formed on a second element, it may include an embodiment in which the first and second elements are in direct contact, or may include an additional element formed between the first and second elements , so that they are not in direct contact with the example. In addition, the embodiments of the present invention may repeat reference numerals and / or letters in different examples. This repetition is for brevity and clarity rather than to show the relationship between the different embodiments discussed.

[0046] Furtherm...

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate and a conductive layer covering the surface of the substrate, and the substrate and the conductive layer form a composite substrate. The semiconductor device also includes a dielectric layer covering the conductive layer, wherein the conductive layer is located between the dielectric layer and the substrate. The semiconductor device further includes a gallium nitride-containing composite layer over the composite substrate, a gate electrode disposed on the gallium nitride-containing composite layer, and a source electrode and a drain electrode disposed on the gallium nitride-containing composite layer and on opposite sides of the gate electrode, respectively. Thesemiconductor device comprises the composite substrate with the conductive layer, so that the composite substrate is suitable for a machine table for manufacturing the semiconductor device, and the composite substrate can be attached to the machine table. The stably arranged composite substrate can effectively improve the electrical performance of the electronic component manufactured on the composite substrate. In addition, the conductive layer of the composite substrate comprises a conductive material capable of resisting high temperature, so that the composite substrate can be suitable fora high-temperature thermal process.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and more particularly to a semiconductor device with a composite substrate and its manufacturing method. Background technique [0002] In recent years, semiconductor device structures have developed rapidly in the fields of computers, consumer electronics, and the like. At present, semiconductor device technology has been widely accepted in the product market of metal oxide semiconductor field effect transistors, and has a high market share. Semiconductor devices are used in various electronic applications such as high power devices, personal computers, cell phones, digital cameras, and other electronic devices. These semiconductor devices are generally fabricated by depositing insulating or dielectric layers, conductive layer materials, and semiconductor layer materials on a semiconductor substrate, and then patterning the various material layers by using a photolit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/7787H01L29/66462
Inventor 周钰杰林信志
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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