Nitrogen-containing semiconductor graphite and preparation method thereof

Abstract

The invention belongs to the technical field of preparation of nitrogen-containing semiconductor graphite and particularly relates to nitrogen-containing semiconductor graphite and a preparation method thereof. The objective of the invention is to solve problems that graphite preparation modes in the prior art are complex, nitrogen-containing semiconductor graphite is not contained, conductivity of existing graphite is not limited by materials, and conductivity is poor. According to the invention, the graphite comprises the following components: 10-20 parts of nitrogen source, 40-50 parts of graphite, 2-4 parts of nickel-coated carbon fiber carbon black, 2-6 parts of metal powder, 3-6 parts of metal fiber, 3-7 parts of carbon fiber, 2-4 parts of phosphor copper powder, 5-10 parts of a thickening agent, 3-6 parts of a dispersing agent and 2-5 parts of a preservative, and a nitrogen source comprises nitrogen, silicon nitride, magnesium nitride, calcium nitride and carbon nitride. The nickel-coated carbon fiber carbon black, the metal powder, the metal fiber, the carbon fiber and the phosphor copper powder all have conductivity. The preparation method is convenient to operate, nitrogen-containing semiconductor graphite can be prepared, and the conductivity of the graphite can be improved.

Description

technical field [0001] The invention relates to the technical field of nitrogen-containing semiconductor graphite preparation, in particular to a nitrogen-containing semiconductor graphite and a preparation method thereof. Background technique [0002] Graphite is composed of graphene sheets stacked layer by layer according to AB, ABC or AA. A single layer of graphene is the basic unit of various sp2 hybrid carbon materials. The stable graphene structure is obtained by material scientists and researchers. The dream of physicists, the ideal two-dimensional material is a great advancement for the development of materials and physics. In the energy band structure of graphene, its conduction band is in direct contact with the valence band, and it is in an inverted conical shape. widely used. Therefore, opening the band gap has become the most important method and means to promote the wide application of graphene in the field of electronics. The six-membered ring structure of ...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the disadvantages of complex preparation methods of graphite in the prior art, no nitrogen-containing semiconductor graphite, and the electrical conductivity of existing graphite is limited by the inability of the material, and the shortcomings of poor electrical conductivity, and propose a nitrogen-containing semiconductor Graphite and its preparation method