Ultraviolet LED chip and manufacturing method thereof

Abstract

The invention provides an ultraviolet LED chip and a manufacturing method thereof. A thin AlxInyGa1-x-yN insertion layer is inserted between the well barriers, and the lattice constant of the AlxInyGa1-x-yN insertion layer is between InGaN and AlGaN, so that lattice mismatch between the well barriers is reduced, the crystal quality of a well barrier interface is improved, the intensity of a polarization electric field is weakened, and the improvement of the power of an ultraviolet LED chip is facilitated. The Al component and the In component are subjected to doping gradient optimization, so that more effective electron constraint and more uniform hole injection are realized, carriers are distributed in the whole multi-quantum well structure region in a more balanced manner, and the ultraviolet LED chip with high luminous efficiency is realized. The AlxInyGa1-x-yN insertion layer is generated by adopting a pulse source passing method, and Al and In atoms have enough time to migrate onthe surface, so that two-dimensional layered growth is facilitated, meanwhile, material components can be more finely controlled, and the crystal quality of the AlxInyGa1-x-yN insertion layer can be further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more specifically relates to an ultraviolet LED chip and a manufacturing method thereof. Background technique [0002] In recent years, due to the excellent physical and chemical properties of GaN-based materials, such as large band gap, high breakdown electric field and high electron saturation mobility, etc., they have received extensive attention and applications in the fields of electricity and optics. High blue-green luminescent material. However, only a very narrow part of the emission spectrum of GaN-based materials has been utilized so far. By adding Al to GaN-based materials, luminescence covering the entire ultraviolet band is realized. [0003] At the same time, due to the important application of ultraviolet light in the fields of industrial curing, sterilization and environmental monitoring, the market prospect is extremely broad. However, due to the limit...

AI Technical Summary

Problems solved by technology

However, due to the limitations of materials, structures, and production processes, there are still many problems in the large-scale application of ultraviolet LEDs, such as serious overflow problems caused by insufficient electron confinement, and low luminous efficiency caused by strong polarization electric fields. And the quality of AlGaN crystals needs to be further improved, all of which have brought huge challenges to the commercialization of UV LEDs

[0004] At present, the quantum well structures of conventional ultraviolet LED chips are mainly: InGaN / GaN, due to the low barrier of GaN, electrons cannot be effectively restrained, and electron overflow is serious; InGaN / AlGaN, although electrons can be effectively restrained, but the two materials The lattice mismatch is large, and the polarization electric field is intensified, thereby reducing the luminous efficiency; InGaN / AlInGaN, although the lattice mismatch of these two materials is small, the electron confinement ability is limited

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