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Two-dimension transition metal sulphur group compound and preparation method and device thereof

A technology of transition metal chalcogenides and transition metals, which is applied in the direction of metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of inability to achieve large-area uniform distribution, uneven distribution of crystals on the substrate surface, and material defects To achieve the effect of promoting uniform nucleation and growth, achieving controllable preparation, and low material defects

Pending Publication Date: 2020-11-06
TSINGHUA BERKELEY SHENZHEN INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The two-dimensional transition metal sulfides prepared by the current CVD method often have high intrinsic defects, which limits their applications in the fields of optics and electronics (ACS Applied Materials and Interfaces, 2018, 10, 40831)
[0006] In summary, although the preparation of two-dimensional transition metal chalcogenides has made great progress, there are still problems of uneven distribution of prepared crystals on the substrate surface, uneven thickness, many material defects, and the inability to achieve large-area uniform distribution. Controllable preparation of two-dimensional materials and other issues

Method used

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  • Two-dimension transition metal sulphur group compound and preparation method and device thereof
  • Two-dimension transition metal sulphur group compound and preparation method and device thereof
  • Two-dimension transition metal sulphur group compound and preparation method and device thereof

Examples

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Embodiment 1

[0052] This embodiment provides a two-dimensional molybdenum disulfide material, see figure 1 , prepared according to the following steps:

[0053] (1) Dissolve 30 mg of anhydrous sodium molybdate powder in 10 mL of deionized aqueous solution to form a 0.02 mol / L sodium molybdate aqueous solution. Take 5 μL of sodium molybdate aqueous solution and drop it on a 10 mm×10 mm silicon dioxide / silicon substrate, spin-coat it at a rate of 3000 rpm for 1 min, and dry it naturally to obtain a substrate spin-coated with sodium molybdate.

[0054] (2) Place the substrate obtained in step (1) in the central heating zone of the tube furnace, and place 20 mL of dodecanethiol solution in a sealed bubbling device at the reaction front end of the tube furnace as a liquid sulfur source.

[0055] (3) Exhaust the air in the reaction device by using argon gas, the flow rate of the argon gas is 800 sccm, and the time of feeding is 30 min.

[0056] (4) In the tube furnace in the step (2), feed arg...

Embodiment 2

[0074] Embodiment 2 provides a two-dimensional molybdenum disulfide material, and the preparation steps are the same as those in Embodiment 1, except that the substrate used is a sapphire substrate.

[0075] The two-dimensional molybdenum disulfide material prepared in Example 2 is used for characterization, and its optical microscope picture is as follows: Figure 18 As shown, it can be seen from the figure that the two-dimensional molybdenum disulfide obtained in this embodiment is in the shape of a triangular sheet and is evenly distributed on the substrate.

Embodiment 3

[0077] Example 3 provides a two-dimensional molybdenum disulfide material. The preparation steps are the same as in Example 1, except that the heating reaction time in step (5) is changed from 60 minutes to 30 minutes.

[0078] The two-dimensional molybdenum disulfide material prepared in Example 3 is characterized, and its optical microscope picture is as follows: Figure 19 As shown, it can be seen from the figure that the two-dimensional molybdenum disulfide obtained in this example is in the shape of a triangular sheet, slightly smaller in size than the sample obtained in Example 1, and is still uniformly distributed on the substrate.

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Abstract

The invention discloses a two-dimension transition metal sulphur group compound and a preparation method and device thereof. The preparation method comprises the following steps that a liquid state transition metal source is taken, and a substrate is covered by the liquid state transition metal source; a carrier gas is utilized to convey a liquid state sulphur group source to the position of the substrate, wherein the sulphur group source is mercaptan, selenol or telluromercaptan; and heating reaction is conducted in an enclosed environment, and the two-dimension transition metal sulphur groupcompound is acquired. According to the preparation method for the two-dimension transition metal sulphur group compound, the liquid state transition metal source and liquid state sulphur group sourceare utilized and serve as reaction precursors, it is easy to construct a stable precursor concentration field growth system through control over the concentration of the reaction precursors; thus uniform nucleation and growth of the transition metal sulphur group compound is promoted so that density distribution of the morphology, thickness and crystal domain dimension of the transition metal sulphur group compound material acquired through preparation on the substrate is more uniform; and the preparation method has outstanding optical and electrical properties and a broad application prospect.

Description

technical field [0001] The invention relates to the technical field of two-dimensional materials, in particular to a two-dimensional transition metal chalcogenide compound, a preparation method and a device thereof. Background technique [0002] Two-dimensional materials such as graphene are the frontier direction of emerging scientific research and major industrial research and development in recent years. The discovery of graphene in 2004 caused a sensation in academia and industry, and attracted the attention of experts, scholars and engineers in the fields of physics, materials science, electronics and electrical engineering, chemistry, etc., and discovered a series of novel physics in it. phenomena and broad application prospects. Two-dimensional materials have completely different characteristics from traditional three-dimensional materials, so they may be rapidly applied in energy storage and conversion, electronic and optoelectronic devices, catalysis, sensing, ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/44
CPCC23C16/305C23C16/44
Inventor 刘碧录冯思敏成会明谭隽阳
Owner TSINGHUA BERKELEY SHENZHEN INST
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