A kind of preparation method of uvc-led light-emitting device
A UVC-LED and light-emitting device technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of chip and substrate pollution, affect light output and reliability, and affect product air tightness, etc., and achieve a high pass rate , Improve the effect of problems with unqualified products and high yield
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0037] A method for preparing a UVC-LED light-emitting device, comprising the following steps:
[0038] S1. Die bonding: fix the chip on the support with flux. The support includes a base and a dam. The bottom of the dam is integrally connected with the base. The support is an aluminum nitride ceramic substrate, and the surface is plated with copper, nickel and gold, and the copper is greater than 65+ / -10u, nickel is greater than 3u, and Au is 0.075u. The bracket is preheated at 130°C for 15 minutes before plasma cleaning, and then cooled at room temperature for 20 minutes. There are Kina diodes, and Kina is a Si substrate;
[0039] The flux is added to the space formed by the dam enclosure, the amount of flux added is 1 / 2 of the chip height, and the flux parameters are required: viscosity = 130KCPS, boiling point at 180°C;
[0040] The parameters of the crystal bonder: the height of the scraper of the glue tray ≤ 1-2mm, the height distance from the origin of the dispensing ...
Embodiment 2
[0057] A method for preparing a UVC-LED light-emitting device, comprising the following steps:
[0058] S1. Die bonding: fix the chip on the support with flux. The support includes a base and a dam. The bottom of the dam is integrally connected with the base. The support is an aluminum nitride ceramic substrate, and the surface is plated with copper, nickel and gold, and the copper is greater than 65+ / -10u, nickel is greater than 3u, and Au is 0.075u. The bracket is preheated at 130°C for 15 minutes before plasma cleaning, and then cooled at room temperature for 20 minutes. There are Kina diodes, and Kina is a Si substrate;
[0059] The flux is added to the space formed by the dam enclosure, the amount of flux added is 1 / 2 of the chip height, and the flux parameters are required: viscosity = 130KCPS, boiling point at 200°C;
[0060] The parameters of the crystal bonding machine: the height of the scraper of the glue tray ≤ 1-2mm, the height distance from the origin of the di...
Embodiment 3
[0077] A method for preparing a UVC-LED light-emitting device, comprising the following steps:
[0078] S1. Die bonding: fix the chip on the support with flux. The support includes a base and a dam. The bottom of the dam is integrally connected with the base. The support is an aluminum nitride ceramic substrate, and the surface is plated with copper, nickel and gold, and the copper is greater than 65+ / -10u, nickel is greater than 3u, and Au is 0.075u. The bracket is preheated at 130°C for 15 minutes before plasma cleaning, and then cooled at room temperature for 20 minutes. There are Kina diodes, and Kina is a Si substrate;
[0079] The flux is added to the space formed by the dam enclosure, the amount of flux added is 1 / 2 of the chip height, and the flux parameters are required: viscosity = 130KCPS, boiling point at 200°C;
[0080] The parameters of the crystal bonding machine: the height of the scraper of the glue tray ≤ 1-2mm, the height distance from the origin of the di...
PUM
Property | Measurement | Unit |
---|---|---|
boiling point | aaaaa | aaaaa |
boiling point | aaaaa | aaaaa |
boiling point | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com