Method for preparing ZnTe doped p-type polycrystalline Bi2Te3 thermoelectric material
A thermoelectric material, p-type technology, used in the growth of polycrystalline materials, the junction lead-out material of thermoelectric devices, the manufacture/processing of thermoelectric devices, etc. , difficult to wait
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Embodiment 1
[0030] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:
[0031] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials, according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;
[0032] (2) The ingot body that step (1) is obtained is carried out melt spinning, and protective atmosphere is argon gas, and copper stick rotating speed is 8m / s, and injection aperture is 0.35mm;
[0033] (3) Collect the thin strip obtained in step (2), then vacuum-seal it in a quartz tube, put it into the sample for annealing after the temperature of the annealing furnace reaches 423K, and the annealing time is 20min;
[0034](4) Grinding the annealed thin strip through a 200-mesh sieve and then performin...
Embodiment 2
[0041] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:
[0042] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials, according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;
[0043] (2) The ingot body that step (1) is obtained is carried out melt spinning, and protective atmosphere is argon, and copper stick rotating speed is 4m / s, and injection aperture is 0.35mm;
[0044] (3) Collect the thin strips obtained in step (2), and then vacuum-seal them in a quartz tube. When the temperature of the annealing furnace reaches 423K, put the sample into the sample for annealing, and the annealing time is 20 minutes;
[0045] (4) Grinding the annealed thin strip through a 200-mesh sieve ...
Embodiment 3
[0052] A preparation of ZnTe-doped p-type polycrystalline Bi 2 Te 3 The method of thermoelectric material, concrete steps are as follows:
[0053] (1) Using high-purity Bi, Sb, Te, Zn as initial raw materials according to Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 The stoichiometric ratio of each element is weighed and vacuum-sealed in a quartz tube, the quartz tube is placed in a melting furnace, melted at 1123K for 10 hours, and cooled with the furnace to obtain an ingot;
[0054] (2) The ingot body obtained in step (1) is subjected to melt spinning, the protective atmosphere is argon, the rotational speed of the copper rod is 4 m / s, and the injection diameter is 0.35 mm.
[0055] (3) Collect the thin strips obtained in step (2), and then vacuum-seal them in a quartz tube. When the temperature of the annealing furnace reaches 523K, put the sample into it for annealing, and the annealing time is 20min.
[0056] (4) Grinding the annealed thin strip through a 200-mesh sieve and t...
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