Preparation method of indium tin oxide grinding balls

A technology of indium tin oxide and grinding balls, applied in chemical instruments and methods, manufacturing tools, other chemical processes, etc., can solve the problem that the grinding balls are difficult to meet the grinding needs of ITO targets

Inactive Publication Date: 2020-10-23
725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the existing grinding balls are difficult to meet the grinding needs of ITO target material preparation, the present invention provides a method for preparing indium tin oxide grinding balls

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] A preparation method of indium tin oxide grinding balls, comprising the following steps:

[0025] Step 1. Add indium oxide powder and tin oxide powder to water for mixing, grinding and granulation to obtain granulated powder. The weight ratio of indium oxide powder is 90%-97% of the total weight of indium oxide powder and tin oxide powder.

[0026] Step 2: Put the granulated powder obtained in Step 1 into a mold and perform cold isostatic pressing at a pressure of 50-200 MPa to obtain a green body, which is crushed and sieved to obtain seed crystals.

[0027] Step 3: Use the seed crystal obtained in step 2 as the core of the ball blank, roll the granulated powder obtained in step 1 and the seed crystal obtained in step 2 to obtain a ball blank, and the diameter of the ball blank is 0.1mm-4mm .

[0028] Step 4. Carry out wax sealing on the surface of the ball blanks obtained in step 3, pour a plurality of ball blanks into a container containing liquid paraffin at the sa...

Embodiment 1

[0034] Add indium oxide powder and tin oxide powder into water at a ratio of 90:10 for mixing, grinding, and granulation. The obtained granulated powder is put into a mold, subjected to cold isostatic pressing at 200MPa, crushed, and sieved to obtain crystal seeds. Using the obtained granulated powder and seed crystals, a ball blank with a particle diameter of about 3.5 mm is obtained by a rolling method.

[0035] Melt the paraffin, pour the billet into the liquid paraffin, and roll it through the container to disperse it evenly. Take out the billet, and then pass through a 5mm screen and enter cold water for cooling and film solidification. The wax-sealed ball blank is cold isostatic pressed at 250MPa, degreased at 600°C, and then sintered at 1510°C for 15 hours in an oxygen atmosphere to obtain indium tin oxide grinding balls with a particle size of about 3mm and a density of 7.129g / cm 3 , The average grain size is 5.22μm.

[0036] The obtained indium tin oxide grinding ba...

Embodiment 2

[0038] Add indium oxide powder and tin oxide powder into water at a ratio of 90:10 for mixing, grinding, and granulation. The obtained granulated powder is put into a mold, subjected to cold isostatic pressing at 200MPa, crushed, and sieved to obtain crystal seeds. Using the obtained granulated powder and seed crystals, a ball blank with a particle diameter of about 0.35 mm is obtained by rolling.

[0039] Melt the paraffin, pour the billet into the liquid paraffin, stir the liquid paraffin in the container to disperse it evenly. Take out the billet, and then pass through a 0.5mm screen and enter cold water for cooling and film solidification. After wax sealing, cold isostatic pressing at 300MPa, degreasing at 600°C, and then sintering at 1490°C for 10 hours in an oxygen atmosphere to obtain indium tin oxide grinding balls with a particle size of 0.3mm and a density of 7.135g / cm 3 , The average grain size is 4.88μm.

[0040] The obtained indium tin oxide grinding balls are u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
densityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of indium tin oxide grinding balls. The preparation method comprises the steps that adding indium oxide powder and tin oxide powder into water to be mixed,ground and granulated to obtain a granulation powder, wherein the total weight of the indium oxide powder and the tin oxide powder is 90 to 97%; then putting the granulation powder into a mold, carrying out isostatic cool pressing treatment to obtain a green body, and crushing and screening the green body to obtain a seed crystal; taking the seed crystal as the core of the ball blank, and rollingand forming the granulation powder and the seed crystal to obtain the ball blank; carrying out wax sealing on the surface of the ball blank, and then carrying out isostatic cool pressing treatment onthe ball blank; and degreasing the ball blank subjected to isostatic cool pressing, and sintering the degreased ball blank to obtain the indium tin oxide grinding balls. The indium tin oxide grindingball with high density and small crystal grains is obtained by a method of matching roll forming, isostatic cool pressing and sintering, the ITO target material prepared by the grinding balls has thedensity of more than 7.12 g/cm < 3 > and the purity of more than 99.99%, and the grinding requirement of ITO target material preparation can be met.

Description

technical field [0001] The invention relates to the field of preparation methods of ceramic grinding balls, in particular to a preparation method of indium tin oxide grinding balls. Background technique [0002] The ITO target can form a transparent conductive film on the substrate by magnetron sputtering. It is an important material for the manufacture of flat-panel liquid crystal displays and has important applications in electronics, information, communication, and artificial intelligence. In order to obtain a conductive film with low resistance and high light transmittance, the relative density of the ITO target is required to reach 99.5%, the structure is uniform, and the purity reaches 99.99%. Density and organization will affect the structure and uniformity of the film, and purity will directly affect the resistance and light transmittance of the film. [0003] In the preparation of ITO targets, zirconia grinding balls or agate grinding balls are generally used in th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/622C09K3/14B28B3/00B28B3/12
CPCC04B35/457C04B35/622C09K3/1409B28B3/003B28B3/12C04B2235/3286C04B2235/656C04B2235/6567C04B2235/6583C04B2235/786C04B2235/77C04B2235/95C04B2235/96
Inventor 师琳璞王政红张秀勤
Owner 725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap