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Silicon-based gallium nitride microwave device and preparation method thereof

A technology of microwave devices and silicon-based nitrogen, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that microwave devices cannot be produced on a large scale, and achieve improved turn-on voltage, suppression of leakage, and lower energy band poor effect

Active Publication Date: 2020-10-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a silicon-based gallium nitride microwave device and its preparation method, so as to overcome the defects that microwave devices cannot be produced on a large scale and have high cost in the prior art.

Method used

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  • Silicon-based gallium nitride microwave device and preparation method thereof
  • Silicon-based gallium nitride microwave device and preparation method thereof
  • Silicon-based gallium nitride microwave device and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0052] This embodiment provides a method for preparing a silicon-based gallium nitride microwave device, and the specific steps are as follows:

[0053] (1) The GaN-on-HRSi substrate is selected, and the substrate includes a high-resistance silicon-based substrate, a buffer layer (doped with C or Fe), a channel layer, a spacer layer, a barrier layer, and a cap layer from bottom to top. Organic cleaning, inorganic cleaning and other pretreatments are carried out on the substrate.

[0054] (2) Deposit about 50nm thick SiNx as a passivation layer on the substrate by LPCVD at 780°C; perform photolithography, development, and RIE etching on the device to expose the source and drain regions, and then perform ICP on the source and drain regions Etching, the conditions used for ICP etching are as follows: the atmosphere is Cl 2 / N 2 / O 2 : 40 / 10 / 5sccm, the chamber temperature is 20°C, the chamber pressure is 10mTorr, the ICP power is 150W, the RF power is 150W, the etching time is ...

Embodiment 2

[0061] The first passivation layer is made of LPCVDSiN in embodiment 1 step (2) x Replaced by PECVDSiO 2 , all the other are identical with embodiment 1, obtain silicon-based gallium nitride microwave device, the measured ohmic contact resistance ratio contact resistivity (same as embodiment 1 test conditions) is 5.57*10 -5 Ω*cm 2 , increased to 1.7 times of the original, and the ohmic contact metal edge is rough, and the phenomenon of diffusion to the surrounding is more obvious. Figure 9 The first passivation layer is PECVDSiO 2 (a) and LPCVDSiN x (b) And the microscopic image after mesa etching, it can be observed that the edge of the former is rougher and the metal diffusion phenomenon is more obvious.

Embodiment 3

[0063] Change the first layer of passivation layer and the second layer of passivation layer into etching the first layer of passivation layer, the second layer of passivation layer, cap layer, barrier layer in embodiment 1 step (4), and the rest All are the same as in Example 1, and the silicon-based gallium nitride microwave device is obtained. It is estimated that the threshold voltage of the device will be significantly shifted in the positive direction, and may even reach a positive value, which can improve the stability of the device and reduce the non-working state. power consumption.

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Abstract

The invention relates to a silicon-based gallium nitride microwave device and a preparation method thereof. The method comprises the steps of preprocessing a substrate, and depositing a first passivation layer; etching to form a groove, then depositing the ohmic contact metal of a source electrode and a drain electrode, and annealing to form the ohmic contact; etching the device; depositing a second passivation layer on the first passivation layer and the ohmic contact, then etching the first passivation layer and the second passivation layer, and depositing a gate metal after preprocessing; depositing a third passivation layer on the surface of the device, annealing, etching, and depositing a thickened metal; and depositing a fourth passivation layer, etching the passivation layer at theconnecting line part needing plate making, exposing the thickened metal, and preparing the connecting line. The method is simple and easy to operate, is low in cost and is capable of effectively reducing the electric leakage of the device.

Description

technical field [0001] The invention belongs to the field of wide-bandgap semiconductor microwave devices and their preparation, in particular to a silicon-based gallium nitride microwave device and its preparation method. Background technique [0002] With the promotion of 5G communication, the third generation of wide bandgap semiconductor era represented by gallium nitride (GaN) materials. GaN materials have the characteristics of large forbidden band width, high thermal conductivity, and high electron saturation drift rate. The large bandgap allows GaN devices to work normally in a radiation environment without failure; the high breakdown voltage ensures that the device can provide higher output power; the extremely high electron saturation drift rate makes GaN materials The device can take into account both high frequency and high power. At the same time, the JFOM quality factor of gallium nitride material is much higher than that of other semiconductor materials. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335H01L29/778H01L29/10
CPCH01L29/1079H01L29/66462H01L29/7787
Inventor 程新红刘晓博郑理俞跃辉
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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