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A kind of Gan-based gas sensor and preparation method thereof

A gas sensor and device technology, applied in nanotechnology, instruments, scientific instruments and other directions for sensing, can solve the problems of false signals, poor temperature stability, measurement errors, etc., to eliminate false signals, high integration, improve The effect of temperature stability

Active Publication Date: 2021-07-20
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the carrier concentration of the semiconductor material is closely related to the temperature. The inventors of the present invention found that if the ambient temperature changes during the measurement process, the output signal of the semiconductor gas sensor will also change accordingly, and the temperature stability is poor, so that false signal, causing significant measurement errors

Method used

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  • A kind of Gan-based gas sensor and preparation method thereof
  • A kind of Gan-based gas sensor and preparation method thereof

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preparation example Construction

[0031] The invention provides a method for preparing a GaN-based gas sensor, such as figure 1 shown, including the following steps:

[0032] In step S1, the substrate is sampled and the surface of the substrate is pretreated with a concentrated phosphoric acid solution, which can improve the epitaxial growth effect of the GaN buffer layer.

[0033] Step S2, introducing solid Ga source, Al source and NH 3 source, using molecular beam epitaxy technology to sequentially epitaxially grow on the upper surface of the substrate pretreated in step S1: the thickness is 0.1 ~ 1 GaN buffer layer with a thickness of 0.1 ~5 And has a semi-insulating GaN intrinsic layer and Al with a thickness of 10 nm ~ 100 nm x Ga 1-x In the N layer, the Al composition x value ranges from 0.1 to 0.5, and the substrate temperature is 500 o C~800 o C, the growth time is 30min~60min.

[0034] Step S3, using inductively coupled plasma chemical deposition technology in step S2 Al x Ga 1-x SiO w...

Embodiment

[0043] A method for preparing a GaN-based gas sensor, comprising:

[0044] Step S1, sampling the sapphire substrate 1, and pretreating the surface of the sapphire substrate 1 with a concentrated phosphoric acid solution;

[0045] Step S2, introducing solid Ga source, Al source and NH 3 source, using MBE technology to sequentially epitaxially grow on the upper surface of sapphire substrate 1: 1 Thick GaN buffer layer2,1 Thick GaN intrinsic layer3 and 50 nm thick Al 0.3 Ga 0.7 N layer 4, wherein the temperature of sapphire substrate 1 is 600 o C, the growth time is 40min;

[0046] Step S3, using ICPCVD technology on Al 0.3 Ga 0.7 The upper surface of N layer 4 deposits 50nm thick SiO 2 Medium layer 5;

[0047] Step S4, using sputtering method on SiO 2 A 20nm thick noble metal Pd layer 6 is deposited on the upper surface of the dielectric layer 5;

[0048] Step S5, spin coating 1 on the upper surface of the noble metal Pd layer 6 Thick photoresist, and use ultravio...

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Abstract

The invention discloses a GaN-based gas sensor and a preparation method thereof, belonging to the technical field of gas sensors. The preparation method comprises: sampling a substrate, and pretreating the surface with concentrated phosphoric acid; introducing a solid Ga source, an Al source and NH 3 Source, sequentially grow GaN buffer layer, GaN intrinsic layer and Al on the substrate x Ga 1‑x N layer; SiO deposited on AlGaN layer 2 Dielectric layer; on SiO 2 Deposit a noble metal layer on the dielectric layer; prepare two gate patterns on the noble metal layer, and then remove the noble metal layer and SiO outside the positions of the two gate patterns 2 Dielectric layer; metal is deposited on the AlGaN layer to form signal output electrodes, power electrodes and ground electrodes; Si is deposited on the noble metal layer at a gate pattern 3 N 4 layer to fabricate a GaN-based gas sensor. The GaN-based gas sensor of the invention has compact structure and high integration, can adapt to high temperature environment, has good temperature stability and good practicability.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a GaN-based gas sensor and a preparation method thereof. Background technique [0002] A gas sensor is a device that converts information such as gas composition and concentration into information that can be used by personnel, instruments, computers, etc. It has been widely used in environmental monitoring and weather forecasting systems. As a gas-sensing material, GaN material is mostly used in semiconductor gas sensors to detect harsh environments where toxic and harmful gases exist because of its multi-functional advantages such as temperature resistance and pressure resistance, wide operating range, and easy integration. However, the carrier concentration of the semiconductor material is closely related to the temperature. The inventors of the present invention found that if the ambient temperature changes during the measurement process, the output signal of the semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12B82Y15/00B82Y40/00
CPCB82Y15/00B82Y40/00G01N27/127
Inventor 仇志军叶怀宇张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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