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Radiator integrated power module and manufacturing method thereof

A technology that integrates heat sinks and power modules. It is used in semiconductor/solid-state device manufacturing, electrical solid-state devices, and semiconductor devices. It can solve the problems of difficult installation, low heat dissipation efficiency of power modules, and poor connection reliability of heat sinks. Convenience and efficiency, improved product life and reliability, and improved heat dissipation efficiency

Pending Publication Date: 2020-09-22
浙江天毅半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the object of the present invention is to provide a power module with an integrated heat sink and its manufacturing method, which solves the technical problems of the existing power modules such as low heat dissipation efficiency, difficult installation, and poor connection reliability with the heat sink.

Method used

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  • Radiator integrated power module and manufacturing method thereof
  • Radiator integrated power module and manufacturing method thereof
  • Radiator integrated power module and manufacturing method thereof

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Embodiment Construction

[0036] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0037] as attached Figure 4 , Figure 6 As shown, a specific embodiment of a power module with an integrated heat sink includes: a chip 1, a DBC board 4 (copper-clad ceramic substrate) for arranging chips, a heat sink 8 with a copper area 80 on the upper surface, and the The chip 1 and the DBC board 4 are packaged into the package shell 5 of the heat sink 8 . The DBC board 4 (copper-clad ceramic substrate) includes a front copper clad layer 40 , a ceramic insulating layer 41 and a rear copper clad layer 42 . A chip soldering layer 3 is provided between the chip 1 and the front copper clad layer 40, and the chip 1 is further connected to the front copper c...

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Abstract

The invention discloses a radiator integrated power moduleand a manufacturing method thereof. The radiator integrated power modulecomprises a chip, a DBC plate (copper-clad ceramic substrate) for arranging the chip, a radiator with a copper area on the upper surface, and a packaging shell for packaging the chip and the DBC into the radiator. The DBC plate(copper-clad ceramic substrate) is tightlyconnected with thecopper area on the upper surface of the radiator in a metal mode by welding or sintering, and therefore the power module integrated with the radiator is integrally formed. The technical problems that an existing power module is low in heat dissipation efficiency, large in installation difficulty, poor in connection reliability and the like can be solved.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a power module with an integrated radiator and a manufacturing method thereof. Background technique [0002] The power module is a combination of power and electronic devices according to certain functions and then potted into a module, which is widely used in inverters, switching power supplies, AC motors and other fields. A typical power module packaging structure is shown in the attached figure 1 As shown, the power module 100 is mainly composed of a chip 1 , a DBC board 4 (including: a front copper clad layer 40 , a ceramic insulating layer 41 and a rear copper clad layer 42 ), a packaging shell 5 , and terminals 6 . The chip 1 is welded on the front copper clad layer 40 , and the electrical connection between the chip 1 and the metal circuit layer on the surface of the front copper clad layer 40 is realized by bonding the wire 2 . The terminal 6 is connected to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H01L23/367H01L21/48H01L21/52
CPCH01L21/4871H01L21/52H01L23/367H01L23/3736H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/00014H01L2924/00
Inventor 邱珍华邱嘉龙刘亚坤
Owner 浙江天毅半导体科技有限公司
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