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Copper manganese alloy type magnetic spin valve

A copper-manganese alloy and magnetic spin technology, which is applied in the field of magnetic spin valves and copper-manganese alloy magnetic spin valves, can solve the problems of poor magnetoresistance loop symmetry, cumbersome and complicated processes, etc.

Inactive Publication Date: 2003-07-30
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, spin valves based on Co / Cu / Co in the prior art generally have poor symmetry of the magnetoresistance loop, and the steps are not wide and flat enough, especially when there are many pinning materials and complex components. It is cumbersome and greatly affects the practical application of the spin valve in this system

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] The copper-manganese alloy CuMn is used to replace the non-magnetic intermediate layer, and the composition of the CuMn alloy film is Cu 94 mn 6 . Prepared by magnetron DC sputtering process, the substrate is silicon wafer Si, the thickness of the bottom Co layer is kept constant at 2nm, and the middle layer Cu 94 mn 6 The thickness is 1.2nm. The background vacuum during preparation is 4.6×10 -5 Pa, Ar gas pressure during sputtering is 0.3Pa. The CuMn alloy was sputtered by direct current, and the sputtering current was 40mA; the Co magnetic layer was sputtered by radio frequency, and the sputtering power was 160W. The deposition rates of Co and CuMn during the preparation were 0.08 and 0.1 nm / s, respectively.

[0012] Co / Cu prepared by this method 94 mn 6 The front and back switching fields (or saturation fields) of the (1.2nm) / Co system are ±0.8kA / m and ±2.4kA / m respectively, the giant magnetoresistance value is 3.0%, and its double-peak structure is very flat...

Embodiment 2

[0014] The copper-manganese alloy CuMn is used to replace the non-magnetic intermediate layer, and the composition of the CuMn alloy film is Cu 94 mn 6 . Prepared by magnetron DC sputtering process, the substrate is silicon wafer Si, the thickness of the bottom Co layer is kept constant at 2nm, and the middle layer Cu 94 mn 6 The thickness is 1.2 nm, and the thickness of the buffer layer and the cover layer are both 5 nm. The background vacuum during preparation is 4.6×10 -5 Pa, Ar gas pressure during sputtering is 0.3Pa. The CuMn alloy was sputtered by direct current, and the sputtering current was 40mA; the Co magnetic layer was sputtered by radio frequency, and the sputtering power was 160W. The deposition rates of Co and CuMn during the preparation were 0.08 and 0.1 nm / s, respectively.

[0015] Cu prepared by this method 94 mn 6 / Co / Cu 94 mn 6 (1.2nm) / Co / Cu 94 mn 6 The front and back switching fields (or saturation fields) of the structural spin valve are only ...

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Abstract

The present invention relates to a cupromanganese type magnetic spinning valve, and is characterized by that it utilizes the magnetron sputtering technology to make preparation, adopts the optimum non-magnetic layer doping formula for preparing magnetic spinning valve with two kind of specicial structures which are Co / CuMn / Co and CuMn'Co / CuMn / Co / CuMn respectively, i.e. in the Co / Cu / Co structure, the CuMn alloy layer is substituted for non-magnetic medium layer Cu to form Co / CuMn / Co, then the buffering layer and covering layer are added to form CuMn / Co / CuMn / Co / CuMn, and in CuMn alloy the Mn atom content is 3%-11%. These magnetic spinning valves with the above-mentioned structures are large in low-field characteristic difference, and are very unique. Said invention possesses low saturated field, high flexibility, and is applicable to different requirements.

Description

Technical field: [0001] The invention relates to a magnetic spin valve, in particular to a copper-manganese alloy magnetic spin valve, which can be used for data storage, readout magnetic heads and various types of sensors, and belongs to the technical field of material engineering. Background technique: [0002] In the existing technology, spin valves and tunnel junctions are considered to be the most promising magnetic nanomaterials today, with great potential in high spatial resolution, high sensitivity sensors and high density random access memory, and major companies and research institutions in the world are currently In the race to develop these devices, especially some devices have been commercialized, and have gained huge economic benefits. Cobalt-copper (Co / Cu) series is a system with a large GMR value obtained in the current research on metal multilayer giant magnetoresistance (GMR), and it is also a relatively mature system. The reason why it has not been put int...

Claims

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Application Information

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IPC IPC(8): H01F10/16H01F10/32H01F41/18
Inventor 王辉夏宇兴
Owner SHANGHAI JIAO TONG UNIV
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