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Magnetic spin Co-Cu valve and producing process thereof

A preparation process and magnetic spin technology, applied in the field of material engineering, can solve problems such as cumbersome process, not wide and flat steps, affecting the practical application of spin valves, etc., and achieve the effect of improving the sensitivity of the system

Inactive Publication Date: 2003-08-13
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

In general, the current spin valves based on Co / Cu / Co generally have poor magnetoresistance loop symmetry, and the steps are not wide and flat enough, especially when there are many pinning materials, complex components, and cumbersome processes. Greatly influenced the practical application of spin valves in this system

Method used

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Effect test

Embodiment

[0009] The magnetic spin valve with Co / Cu / Co-CoO structure was prepared, the substrate was silicon wafer Si, the thickness of the bottom Co layer was kept at 2.0nm, the thickness of the middle layer Cu was 0.7nm, and the background vacuum during preparation was 4.6×10 -5 Pa, the Ar gas pressure during sputtering is 0.3 Pa. The Cu layer was obtained by DC sputtering with a sputtering current of 40mA. The Co magnetic layer was sputtered by radio frequency, and the sputtering power was 160W. The deposition rates of Co and Cu during the preparation were 0.08 and 0.1 nm / s, respectively. The thickness of the Co layer in the first half of the upper pinning layer Co-CoO is 1.0nm, which is obtained by ordinary radio frequency sputtering with a power of 160W, and the second half of CoO is 5:2 Ar and O 2 After the gas is mixed, it is prepared by reaction. After the completion, it is obtained by going out of the vacuum chamber and then oxidizing it with high-purity oxygen at 160 degrees...

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Abstract

A magnetically spinning Co-Cu valve has Co / Cu / Co-CoO structure and is prepared by combination of magnetically controlled sputter with pinning of magnetic layer. The bottom Co layer is 2 nm in thickness. The middle Cu layer is 0.6-2.0 nm in thickness. The thickness of Co layer for front half of upper pinned Co-CoO layer is 1.0 nm and its second half of Co-CoO layer is prepared through mixing Ar gas with O2 gas in a ratio of 5 : 2, reaction and high-temp oxidizing by high-purity oxygen at 150-180 deg.C for 2 hr. It has low saturated field and wide step and is suitable for preparing some sensors.

Description

Technical field: [0001] The invention relates to a magnetic spin valve, in particular to an upper-pinned cobalt-copper magnetic spin valve, which can be used for data storage, readout magnetic heads and various types of electromagnetic sensors, and belongs to the technical field of material engineering. Background technique: [0002] In the existing technology, spin valves and tunnel junctions are considered to be the most promising magnetic nanomaterials today, with great potential in high spatial resolution, high sensitivity sensors and high density random access memory, and major companies and research institutions in the world are currently In the race to develop these devices, especially some devices have been commercialized, and have gained huge economic benefits. Cobalt-copper series Co / Cu is a system with a large GMR value obtained in the current study of metal multilayer film giant magnetoresistance (GMR), and it is also a relatively mature system. The reason why it...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/01H01F10/32H01F41/30H10N50/01
Inventor 王辉夏宇兴
Owner SHANGHAI JIAO TONG UNIV
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