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Top nailing type copper manganese alloy magnetic spin valve

A technology of copper-manganese alloy and magnetic spin, which is applied in the field of material engineering, can solve problems affecting the application of spin valves, poor symmetry of magnetoresistance loops, and insufficiently wide and flat steps, achieving significant progress and practical value, spin Effects of valve performance improvement and magnetoresistance value improvement

Inactive Publication Date: 2003-07-30
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, spin valves based on Co / Cu / Co in the prior art generally have poor symmetry of the magnetoresistance loop, and the steps are not wide and flat enough, especially when there are many pinning materials and complex components. It is cumbersome and greatly affects the practical application of the spin valve in this system

Method used

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Embodiment

[0010] The substrate of the magnetic spin valve is a silicon wafer Si, the thickness of the Co layer is kept constant at 2.0nm, and the composition of the CuMn alloy film in the middle layer is Cu 94 mn 6 , prepared by Cu and Mn composite target, its thickness is 1.2nm. Prepared by magnetron sputtering process, the background vacuum is 4.6×10 -5 Pa, the Ar gas pressure during sputtering was 0.3 Pa, and the sputtering current was 40 mA. The deposition rates of Co and CuMn during the preparation were 0.08 and 0.1 nm / s, respectively. The bottom layer Co (2.0nm) and the first half Co layer (1.0nm) of the upper pinning layer Co-CoO were obtained by radio frequency sputtering with a power of 160W, and the second half CoO was obtained by 5:2 Ar gas and O 2 The gas is mixed and prepared by reaction. The sputtering power is still 160W. After completion, it is obtained by high-temperature oxidation at 160 degrees with high-purity oxygen for two hours after leaving the vacuum chamber....

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Abstract

The present invention relates to an upper pinning type cupromanganese magnetic spinning valve, and is characterized by that the structure of magnetic spinning valve prepared by adopting non-magnetic layer doping and magnetic layer-combined pinning process is Co / CuMn / Co-CoO, i. e. in Co / Cu / Co structure, the CuMn alloy layer is substituted for non-magnetic medium layer Cu to reduce low saturated field, then the upper pinning Co-CoO layer is added instead of Co layer so as to further improve its performance. The component of intermediate layer CuMn alloy film is Cu1-x Mnx, X value is 3%-11%, and the front half-part Co layer of upper pinning layer is obtained by radio-frequency sputtering process, and its rear half-part CaO is prepared by using Ar gas and O2 gas mixture with mixing ratio of 5 : 2. It posseses good low-field characteristics and high flexibility, and is applicable to magnetic storage material and sensor, etc.

Description

Technical field: [0001] The invention relates to a magnetic spin valve, in particular to an upper-pinned copper-manganese alloy magnetic spin valve, which can be used for data storage, readout magnetic heads and various types of electromagnetic sensors, and belongs to the technical field of material engineering. Background technique: [0002] In the existing technology, spin valves and tunnel junctions are considered to be the most promising magnetic nanomaterials today, with great potential in high spatial resolution, high sensitivity sensors and high density random access memory, and major companies and research institutions in the world are currently In the race to develop these devices, especially some devices have been commercialized, and have gained huge economic benefits. Cobalt-copper (Co / Cu) series is a system with a large GMR value obtained in the current research on metal multilayer giant magnetoresistance (GMR), and it is also a relatively mature system. The reas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/16H01F10/32H01F41/18
Inventor 王辉夏宇兴
Owner SHANGHAI JIAO TONG UNIV
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