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Preparation method of aluminum-scandium alloy sputtering target material

A sputtering target, sputtering target technology, applied in sputtering coating, metal material coating process, ion implantation coating, etc. , affecting the film-forming performance and other issues, to achieve uniform particle size and microstructure, uniform chemical composition, and eliminate shrinkage porosity and shrinkage cavities.

Inactive Publication Date: 2020-09-08
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method of aluminum powder and scandium powder is very easy to oxidize and has low density, and the obtained target blank has extremely high oxygen content, which seriously affects the film-forming performance.

Method used

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  • Preparation method of aluminum-scandium alloy sputtering target material
  • Preparation method of aluminum-scandium alloy sputtering target material
  • Preparation method of aluminum-scandium alloy sputtering target material

Examples

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preparation example Construction

[0030] The invention provides a method for preparing an aluminum scandium alloy sputtering target, comprising the following steps:

[0031] The aluminum source and the scandium source are mixed, and the obtained aluminum-scandium alloy ingredients are subjected to vacuum melting to obtain a molten aluminum-scandium alloy liquid;

[0032] Vacuum atomizing the aluminum-scandium molten alloy liquid by using an inert gas flow to obtain aluminum-scandium alloy powder;

[0033] The aluminum-scandium alloy powder is sequentially subjected to outer sheathing and hot isostatic pressing to obtain an aluminum-scandium alloy sputtering target blank;

[0034] The aluminum-scandium alloy sputtering target blank is subjected to binding machining to obtain an aluminum-scandium alloy sputtering target material.

[0035] In the present invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art.

[0036] In the ...

Embodiment 1

[0067] according to figure 1 The process flow chart shown in the preparation of aluminum scandium alloy sputtering target:

[0068] (1) Aluminum (purity is 99.999%) is mechanically descaled, and a sulfuric acid solution with a concentration of 95wt% is used for degreasing treatment, washed with water to remove residual sulfuric acid solution and metal ions, and then placed in a vacuum drying oven at 25°C drying; the spongy scandium (purity is 99.99%) is dried in a vacuum oven at 25°C; the treated spongy scandium and aluminum are evenly mixed according to the ratio of 10at%:90at% to obtain aluminum scandium alloy ingredients;

[0069] (2) Vacuum the high-frequency induction melting furnace to a vacuum degree of 3×10 -3 Pa, the aluminum-scandium alloy batching is placed in the Al with graphite outer lining in the high-frequency induction melting furnace 2 o 3In the crucible, fill the melting furnace with high-purity argon (5N) as a protective gas, vacuum melt at 1150 °C for 2...

Embodiment 2

[0076] Prepare the Al-Sc alloy sputtering target according to the method of Example 1, the difference from Example 1 is:

[0077] In step (1), spongy scandium: aluminum=15at%: 85at%;

[0078] In step (2), the degree of vacuum is 4×10 -3 Pa, the vacuum melting temperature is 1200°C, and the superheating temperature is 150°C;

[0079] In step (3), the jet pressure is 1.7MP, and the spherical powder yield is 93%;

[0080] In step (4), the heating temperature is 1100° C., and the pressing pressure is 90 MPa.

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Abstract

The invention provides a preparation method of an aluminum-scandium alloy sputtering target material, and relates to the technical field of target material preparation. The preparation method of the aluminum-scandium alloy sputtering target material comprises the following steps that an aluminum source and a scandium source are mixed, and vacuum melting is conducted on an obtained aluminum-scandium alloy ingredient to obtain a molten aluminum-scandium alloy liquid; vacuum gas atomization is conducted on the molten aluminum-scandium alloy liquid by using an inert gas flow to obtain aluminum-scandium alloy powder; outer sheathing and hot isostatic pressing molding are sequentially conducted on the aluminum-scandium alloy powder to obtain an aluminum-scandium alloy sputtering target blank; and the aluminum-scandium alloy sputtering target blank is bound and machined to obtain an aluminum-scandium alloy sputtering target material. According to the method, the vacuum gas atomization is conducted by using the inert gas flow, contact between the molten aluminum-scandium alloy liquid and oxygen is isolated, the prepared aluminum-scandium alloy powder is high in sphericity degree, low in oxygen content, and uniform in grain structure, particle size and microstructure, and the aluminum-scandium alloy sputtering target material obtained by utilizing hot isostatic pressing molding is highin density, uniform in chemical component, and free of the defects such as segregation.

Description

technical field [0001] The invention relates to the technical field of target material preparation, in particular to a method for preparing an aluminum-scandium alloy sputtering target material. Background technique [0002] Piezoelectric micromachined ultrasonic transducer is a new type of transducer developed rapidly in recent years with the development of piezoelectric thin film. Thin-film piezoelectric MEMS sensors (pMEMS), ultrasonic transducers (pMUTs) and energy harvesters are widely used in piezoelectric MEMS devices. Aluminum nitride (AlN) has been widely used in the fabrication of pMEMS due to its compatibility with CMOS fabrication processes. However, AlN has a low piezoelectric coefficient, resulting in low sensitivity and electromechanical coupling coefficient of pMEMS (k t2 ). The application of doped aluminum nitride piezoelectric film can significantly improve the performance of pMEMS, especially the aluminum nitride film doped with high scandium content s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06B22F9/08B22F3/15
CPCB22F3/15B22F9/082B22F2009/0844B22F2998/10B22F2999/00C23C14/0036C23C14/0641C23C14/3414B22F2201/20
Inventor 蔡小勇张科侯庆龙吴荣祯曹建亮李强
Owner FUJIAN ACETRON NEW MATERIALS CO LTD
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