Molybdenum disulfide/tungsten disulfide multilayer tantalum-doped thin film and preparation method and application thereof

A technology of tungsten disulfide and molybdenum disulfide, which is applied in the direction of coating, metal material coating process, ion implantation plating, etc., can solve the problems of low humidity sensitivity and unsatisfied anti-oxidation performance, and achieve the improvement of mechanical properties and Anti-corrosion performance, good substrate bonding strength, satisfying the effect of lubrication stability

Active Publication Date: 2020-09-04
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nevertheless, it still does not meet the requirements of aerospace solid lubricant film atmospheric environment oxidation resistance, low humidity sensitivity, high temperature oxidation resistance and mechanical properties, so it is combined with MoS which has different performance advantages in special environments 2 and WS 2 Fabrication of multilayer films is necessary to improve the performance of single-structure films

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  • Molybdenum disulfide/tungsten disulfide multilayer tantalum-doped thin film and preparation method and application thereof
  • Molybdenum disulfide/tungsten disulfide multilayer tantalum-doped thin film and preparation method and application thereof
  • Molybdenum disulfide/tungsten disulfide multilayer tantalum-doped thin film and preparation method and application thereof

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preparation example Construction

[0032] As another aspect of the technical solution of the present invention, it relates to the preparation method of the aforementioned molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film, which includes: adopting magnetron sputtering technology to sequentially deposit a titanium transition layer on the surface of the substrate , a titanium / tantalum / molybdenum disulfide / tungsten disulfide multilayer gradient transition layer and a molybdenum disulfide / tungsten disulfide multilayer tantalum doped layer to obtain the molybdenum disulfide / tungsten disulfide multilayer tantalum doped film.

[0033] In some embodiments, the method for preparing a titanium transition layer includes: using magnetron sputtering technology, using a titanium target as a cathode target, using an inert gas as a working gas, applying a target current to the titanium target, and applying a negative bias to the substrate , so as to deposit a titanium transition layer on the surface of the s...

Embodiment 1

[0061] In this embodiment, the base material is nickel-based 718 high temperature steel and silicon wafer. Using magnetron sputtering technology to prepare a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film on the surface of the substrate, mainly including the following steps:

[0062] Perform mechanical polishing on the surface of the substrate, put the substrate material into an acetone solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen, put it in absolute ethanol solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen and take it out.

[0063] Put the cleaned substrate into the magnetron sputtering chamber, and evacuate until the vacuum degree is lower than 3×10 -5 Pa, and then sputtering and cleaning the target for 5 minutes, applying a bias voltage of -400V to the substrate sample, and performing plasma etching for 30 minutes, and the substrate temperature was 100°C.

[0064] Preparation and deposition of molybdenu...

Embodiment 2

[0075] In this embodiment, the base material is nickel-based 718 high temperature steel and silicon wafer. Using magnetron sputtering technology to prepare a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film on the surface of the substrate, mainly including the following steps:

[0076] Perform mechanical polishing on the surface of the substrate, put the substrate material into an acetone solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen, put it in absolute ethanol solution for 15 minutes of ultrasonic cleaning, blow dry with nitrogen and take it out.

[0077] Put the cleaned substrate into the magnetron sputtering chamber, and evacuate until the vacuum degree is lower than 3×10 -1 Pa, and then sputtering and cleaning the target for 5 minutes, applying a bias voltage of -450V to the substrate sample, and performing plasma etching for 20 minutes, and the substrate temperature is 150°C.

[0078] Preparation and deposition of molybdenum...

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Abstract

The invention discloses a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped thin film and a preparation method and application thereof. The molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped thin film comprises a titanium transition layer, a titanium / tantalum / molybdenum disulfide / tungsten disulfide multi-layer gradient transition layer and a molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped layer which are sequentially stacked in the thickness direction of the molybdenum disulfide / tungsten disulfide multi-layer tantalum-doped thin film. The preparation method comprises the following steps of sequentially depositing the titanium transition layer, the titanium / tantalum / molybdenum disulfide / tungsten disulfide multilayer gradient transition layer and the molybdenum disulfide / tungsten disulfide multilayer tantalum-doped layer on the surface of a substrate by adopting a magnetron sputtering technology to obtain the molybdenum disulfide / tungsten disulfide multilayer tantalum-doped thin film. The molybdenum disulfide / tungsten disulfide multilayer tantalum-doped thin film has good substrate bonding strength, hardness and elastic modulus, andhas good frictional wear performance, good temperature self-adaptive performance, wet and heat resistance and high-temperature oxidation resistance at different temperatures in the atmospheric environment; and the lubricating stability and long-service-life service requirements of aerospace crafts can be met.

Description

technical field [0001] The invention relates to a molybdenum disulfide / tungsten disulfide multilayer film, in particular to a molybdenum disulfide / tungsten disulfide multilayer tantalum-doped film and a preparation method thereof, which can be used on the surface of a substrate under alternating temperature service in an atmospheric environment. It belongs to the technical field of surface treatment. Background technique [0002] Spacecraft and satellites need to experience harsh and complex environmental conditions such as high humidity and alternating high and low temperatures during launch. Therefore, it is necessary to develop solid lubricating coatings that can have stable lubricating properties in a wide temperature range and humidity range. MoS 2 and WS 2 It is a typical layered structure material, and the force between its molecular layers is weak van der Waals bonding force. The shear stress required for sliding along the (002) crystal plane is low, showing good ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/16C23C14/35
CPCC23C14/0623C23C14/165C23C14/345C23C14/352C23C14/3492
Inventor 蒲吉斌曾春王海新王立平薛群基
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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