Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming micro wire by using laser chemical vapor deposition

A chemical vapor deposition and wiring technology, used in electrical components, printed circuit secondary processing, printed circuit manufacturing, etc., to prevent short circuits

Pending Publication Date: 2020-09-01
苏州科韵激光科技有限公司
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to solve or reduce the problems of the existing wiring formation method using laser chemical vapor deposition (laser chemical vapor deposition, LCVD), and the purpose is to provide a fine wiring formation method, which can thicken metal with narrow width in a short time pattern of wiring to ensure the required conductivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming micro wire by using laser chemical vapor deposition
  • Method for forming micro wire by using laser chemical vapor deposition
  • Method for forming micro wire by using laser chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] First, as long as there is no different definition in this specification, all terms used herein including technical or scientific terms include the same meaning as commonly understood by those skilled in the art to which the present invention belongs. Terms such as those commonly used and defined in dictionaries should be interpreted as having the same meaning as in related technical articles, and should not be interpreted as ideal or excessively formal unless they are clearly defined in this specification.

[0044] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0045]The fine wiring forming method of the present embodiment includes a series of steps as follows: a first step of forming fine wiring on a substrate; and a second step of thermally treating the wiring with a laser.

[0046] Specifically, in the first step, a fine wiring pattern having a line width within 2.5 micrometers (...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a micro wire forming method comprising the steps of: forming an alloy wire comprising multiple metal elements on a substrate while supplying a source gas comprising multiple metal elements through laser chemical vapor deposition (LCVD); and performing laser heat treatment in an area comprising the metal wire. According to the micro wire forming method of the present invention, a microwire is formed primarily in an LCVD type, a high-thickness growth having a narrow width and an excellent film quality is accomplished within a short period of time through alloy deposition, and innerfilm quality defects of the micro wire are removed through subsequent laser heat treatment. Accordingly, the texture compactness and the film quality can be improved, and the uniformity and the conductive stability can be increased. In addition, the emission width, the output intensity, and the emission type are adjusted such that patterns are condensed in the process of partial melting and cooling, thereby forming a micro wire having a line width of 2 [mu]m or less.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming fine wiring, and more particularly, to a method for forming fine wiring by laser chemical vapor deposition (laser chemical vapor deposition, LCVD). Background technique [0002] As a conventional fine wiring forming method, a laser chemical vapor deposition (laser chemical vapor deposition, hereinafter referred to as "LCVD") method for forming a fine pattern using a laser can be cited. [0003] LCVD refers to a method in which laser chemical vapor deposition is performed by irradiating a laser beam to a corresponding part of a substrate so that the deposition is concentrated on that part, and a single metal material is used to directly pattern wiring patterns and the like. In this conventional method, in order to form a wiring pattern, a source gas containing any metal element selected from tungsten, molybdenum, copper, aluminum, and the like is supplied to a portion where the wiring p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05K3/14H05K3/22
CPCH01L21/28556H01L21/76876H01L21/76895H01L21/76864H01L21/0262H01L21/268
Inventor 金宇珍具亨俊車正泰
Owner 苏州科韵激光科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com