Solar energy selective absorber materials utilizing multiple photonic heterostructure interfaces
A technology of heterostructure and absorbing materials, applied in the field of solar selective absorbing materials, can solve the problems of low absorption efficiency, low photothermal conversion efficiency, poor high temperature resistance, etc., achieve simple structure, improve photothermal conversion efficiency and performance excellent effect
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Embodiment 1
[0023] When n=2, m=3, k=4, the heterogeneous membrane structure is A[T 1 A] 2 T 2 [BC] 3 T 3 [DE] 4 .
[0024] Interference absorbing layer structure A[T 1 A] n Using multi-layer interference plays a major role in absorption. A dielectric film material is silicon nitride (Si 3 N 4 ), the refractive index n at the solar energy high-energy wavelength center at 550nm A is 2, then the thickness d A =550nm / 4nA ≈70nm; absorbing film layer T 1 It is metal titanium Ti, thickness d T1 10nm.
[0025] Visible light control film structure[BC] m The photon band gap effect is used to achieve high reflection and absorption in the 0.4-0.78 visible light absorption band. B dielectric film material is magnesium fluoride (MgF 2 ), the refractive index n B is 1.38; the C dielectric film material is titanium oxide (TiO 2 ), the refractive index n C is 2.6. There is a dimensional design relation for n B d B +n C d C =λ 1 / 2, λ 1 It takes a value in the range of 450-700nm, ...
Embodiment 2
[0030] When n=3, m=4, k=6, the heterogeneous membrane structure is A[T 1 A] 3 T 2 [BC] 4 T 3 [DE] 6 .
[0031] Interference absorbing layer structure A[T 1 A] n Using multi-layer interference plays a major role in absorption. A dielectric film material is titanium oxide (TiO 2 ), the refractive index n at the solar energy high-energy wavelength center at 550nm A is 2.6, then the thickness d A =550nm / 4n A ≈52nm; the absorption layer T1 is polysilicon (Si), the thickness d T1 10nm.
[0032] Visible light control film structure[BC] m The photon band gap effect is used to achieve high reflection and absorption in the 0.4-0.78 visible light absorption band. B dielectric film material is titanium oxide (TiO 2 ), the refractive index n C 2.6; C dielectric film material is silicon oxide (SiO 2 ), the refractive index n E is 1.46. There is a dimensional design relation for n B d B +n C d C =λ 1 / 2, take the value within the range of 450-700nm. Here, λ 1 The va...
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