Double-sided water-cooled SiC half-bridge module packaging structure of integrated laminated busbar

Abstract

The invention discloses a double-sided water-cooled SiC half-bridge module packaging structure of an integrated laminated busbar. The packaging structure comprises a main body structure, an external connection structure and a heat dissipation device, wherein the external connection structure and the heat dissipation device are connected with the main body structure. The main body structure comprises an upper DBC, a lower DBC, a SiC semiconductor chip and a gasket, the external connection structure comprises a laminated busbar and an AC busbar, and the laminated busbar comprises a positive busbar and a negative busbar. The radiator comprises two water-cooling radiators which are respectively connected with the upper DBC and the lower DBC. The packaging structure has the advantages that thevalue of parasitic inductance is low, the current sharing effect is good, the heat dissipation coefficient is high, the heat dissipation is balanced, the miniaturization, modularization and standardization design of the device is achieved, and the high-speed and high-temperature characteristics of the SiC device can be brought into full play.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a double-sided water-cooled SiC half-bridge module packaging structure integrating laminated busbars. Background technique [0002] Power semiconductor devices are the core components of power electronic converters. In recent years, with the rapid development of power electronics technology in the fields of new energy power generation and electric vehicles and the development of wide bandgap semiconductors such as SiC, new demands have been placed on power semiconductor devices. [0003] Although SiC and other wide bandgap semiconductors have higher operating temperature, higher breakdown voltage strength, higher thermal conductivity and higher switching frequency than Si-based semiconductors. However, when the traditional packaging technology based on Si power devices is used to package wide bandgap semiconductor power devices, two major problems will arise. One is that the traditiona...

AI Technical Summary

Problems solved by technology

Second, the heat dissipation method of traditional packaging technology is mostly single-sided heat dissipation, so the heat dissipation efficiency is poor

[0006] 1. This structure does not consider the method of reducing the power terminal, and most of the inductance of the package structure comes from the power terminal:

[0007] 2. The structure does not use water cooling to dissipate heat, which cannot meet the requirements of high-power devices

[0009] 1. The structure does not consider the balanced heat dissipation of each SiC semiconductor chip;

[0010] 2. The structure does not consider the consistency of the distribution of parasitic inductance of each branch

Images