Double-sided water-cooled sic half-bridge module packaging structure with integrated laminated busbar

Abstract

The invention discloses a double-sided water-cooled SiC half-bridge module packaging structure integrating laminated busbars. The packaging structure includes a main structure, an external connection structure and a heat dissipation device, and both the external connection structure and the heat dissipation device are connected to the main structure. The main structure includes an upper DBC, a lower DBC, a SiC semiconductor chip, and a spacer. The external connection structure includes a laminated busbar and an AC busbar, and the laminated busbar further includes a positive busbar and a negative busbar. The radiator includes two water-cooled radiators, which are respectively connected to the upper DBC and the lower DBC. The advantages of this packaging structure are low parasitic inductance, good current sharing effect, high heat dissipation coefficient and balanced heat dissipation, which realizes the miniaturization, modularization and standardized design of the device, and can give full play to the high-speed and high-temperature characteristics of SiC devices.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a double-sided water-cooled SiC half-bridge module packaging structure integrating laminated busbars. Background technique [0002] Power semiconductor devices are the core components of power electronic converters. In recent years, with the rapid development of power electronics technology in the fields of new energy power generation and electric vehicles and the development of wide bandgap semiconductors such as SiC, new demands have been placed on power semiconductor devices. [0003] Although SiC and other wide bandgap semiconductors have higher operating temperature, higher breakdown voltage strength, higher thermal conductivity and higher switching frequency than Si-based semiconductors. However, when the traditional packaging technology based on Si power devices is used to package wide bandgap semiconductor power devices, two major problems will arise. One is that the traditiona...

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Problems solved by technology

Second, the heat dissipation method of traditional packaging technology is mostly single-sided heat dissipation, so the heat dissipation efficiency is poor

[0006] 1. This structure does not consider the method of reducing the power terminal, and most of the inductance of the package structure comes from the power terminal:

[0007] 2. The structure does not use water cooling to dissipate heat, which cannot meet the requirements of high-power devices

[0009] 1. The structure does not consider the balanced heat dissipation of each SiC semiconductor chip;

[0010] 2. The structure does not consider the consistency of the distribution of parasitic inductance of each branch

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