Low-melting-point high-volume latent heat phase change thermal storage material and preparation method and application thereof

A phase-change heat storage, high-volume technology, applied in heat exchange materials, chemical instruments and methods, etc., to achieve the effects of stable physical and chemical properties, low volume change rate, and high thermal conductivity

Pending Publication Date: 2020-08-14
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to fill the current technical gap and solve the problem of instantaneous heat dissipation of high-power electronic components limited by space, the present invention provides a phase change heat storage material with low melting point and high volume latent heat and its preparation and use method

Method used

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  • Low-melting-point high-volume latent heat phase change thermal storage material and preparation method and application thereof
  • Low-melting-point high-volume latent heat phase change thermal storage material and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0033] A phase change heat storage material with low melting point and high volume latent heat, which is composed of In, Bi, Sn, Zn, and Ga, and the ratio of each component is: In: 12%, Bi: 80%, Sn: 6.5%, Zn: 1 %, Ga: 0.5%. Carry out vacuum melting and casting according to the recipe, the melting temperature is 415±5°C, and after standing at 340±5°C for 3 minutes, cast into an ingot of 20×100×200mm. Sampling test shows that its melting point is between 110 and 130°C, and its volume latent heat is 491J / cm 3 , The thermal conductivity is 12W / mK. The surface of the billet was milled to a thickness of 18 mm, and rolled to 14 mm at room temperature. Wire-cut and face-mill the rolled billet to prepare a 12×20×20mm block material, which is filled into the 6061 aluminum alloy shell with a size interference of 3%. Such as figure 1 Shown is a schematic diagram of a low-melting point phase-change heat storage alloy packaged in an aluminum alloy shell.

[0034] Such as figure 2 As ...

Embodiment 2

[0036] A phase-change heat storage material with low melting point and high volume latent heat, which is composed of In, Bi, Sn, Zn, and Ga, and the ratio of each component is: In: 15%, Bi: 75%, Sn: 8.5%, Zn: 0.9 %, Ga: 0.6%. Carry out vacuum melting and casting according to the recipe, the melting temperature is 410±5°C, and after standing at 330±5°C for 3 minutes, downcast into an ingot of 20×100×200mm. Sampling and testing, its melting point is between 90 and 110°C, and its volume latent heat is 457J / cm 3 , The thermal conductivity is 14W / mK. The surface of the billet was milled to a thickness of 18 mm, and rolled to 14 mm at room temperature. Wire-cut and face-mill the rolled billet to prepare a 12×20×20mm block material, which is filled into the 7075 aluminum alloy shell with a size interference of 2%. Such as figure 1Shown is a schematic diagram of a low-melting point phase-change heat storage alloy packaged in an aluminum alloy shell.

[0037] Such as figure 2 As...

Embodiment 3

[0039] A phase change heat storage material with low melting point and high volume latent heat, which is composed of In, Bi, Sn, Zn, and Ga, and the ratio of each component is: In: 18%, Bi: 70%, Sn: 9%, Zn: 2.6 %, Ga: 0.4%. Carry out vacuum melting and casting according to the recipe, the melting temperature is 405±5°C, and after standing at 320±5°C for 3 minutes, down-cast into an ingot of 20×100×200mm. Sampling and testing, its melting point is between 70 and 90°C, and its volume latent heat is 393J / cm 3 , The thermal conductivity is 18W / mK. The surface of the billet was milled to a thickness of 18 mm, and rolled to 14 mm at room temperature. Wire-cut and face-mill the rolled billet to prepare a 12×20×20mm block material, which is filled into the 2024 aluminum alloy shell with a size interference of 1%. Such as figure 1 Shown is a schematic diagram of a low-melting point phase-change heat storage alloy packaged in an aluminum alloy shell.

[0040] Such as figure 2 As ...

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Abstract

The invention relates to a low-melting-point high-volume latent heat phase change thermal storage material and a preparation method and application thereof, and belongs to the field of phase change thermal storage materials. The alloy consists of the following components in percentage by weight: 10 to 20 percent of In, 70 to 80 percent of Bi, 5 to 15 percent of Sn, 0 to 3 percent of Zn and 0 to 1percent of Ga. The alloy is prepared through casting and deformation processing, the phase change thermal storage alloy and an aluminum alloy shell are packaged together, and a heat dissipation element with the high thermal conductivity of the aluminum alloy and the thermal storage performance of the low-melting-point alloy is obtained. The low-melting-point alloy is higher in latent heat absorption response speed, is particularly suitable for heat dissipation occasions with high limitation on a packaging space, has low space requirements, and is beneficial to the overall design of equipment;the volume latent heat is large, the heat conductivity is high, the rate of volume change is low, the physicochemical property is stable, and packaging is facilitated.

Description

technical field [0001] The invention relates to a phase change heat storage material with a low melting point and high volume latent heat, a preparation method and application thereof, and belongs to the field of phase change heat storage materials. Background technique [0002] Electronic devices are developing towards high integration, large packaging density and high operating frequency. The continuous increase of heat flux makes heat dissipation an important problem restricting the development of electronic equipment, especially under abnormal working conditions such as startup and short-term overload, instantaneous overheating The problem of "thermal barrier" caused by the increase of local hot spot heat flux has become increasingly prominent. For every 10°C increase in temperature of electronic devices, the failure rate will double, and for every 25°C increase in temperature, the failure rate will increase by 10 times. 55% of electronic device failures are caused by t...

Claims

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Application Information

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IPC IPC(8): C09K5/06C22C12/00C22C1/02
CPCC09K5/063C22C1/02C22C12/00
Inventor 黄树晖郭宏解浩峰张习敏
Owner GRIMAT ENG INST CO LTD
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