X-ray detector suitable for high temperature environment and preparation method thereof

Abstract

An X-ray detector suitable for high temperature environment and preparation method thereof, using A 3 Bi 2 X 9 type all-inorganic bismuth-based halide perovskite single crystal material as the active layer for detecting X-rays, where A is Cs + and Rb + One of them; X is I ‑ , Br ‑ and Cl ‑ One or more of the mixtures; the working temperature is 50‑150℃. The preparation method comprises the following steps, step 1, A 3 Bi 2 X 9 Type all-inorganic bismuth-based halide perovskite single crystal is cut into the required size, where A is Cs + and Rb + One of them; X is I ‑ , Br ‑ and Cl ‑ One or more of the mixed; step 2, the cut A 3 Bi 2 X 9 Type perovskite single crystal is cleaned and surface polished; step 3, the A obtained in step 2 3 Bi 2 X 9 metal electrodes were evaporated at both ends of the perovskite single crystal to obtain metal electrodes, A 3 Bi 2 X 9 X-ray detectors with layered perovskite single crystals and metal electrodes. A 3 Bi 2 X 9 The all-inorganic bismuth-based halide perovskite single crystal is used as the active layer of an X-ray detector suitable for a high temperature environment, and the temperature of the high temperature environment is 50-150 °C.

Description

technical field [0001] The invention relates to an X-ray detector used in a high temperature environment, in particular to an X-ray detector suitable for a high temperature environment and a preparation method thereof. Background technique [0002] Semiconductor radiation detectors have been widely used in defense and military, medical and health, public safety, high-end industry, scientific research and other industries due to their high energy resolution, high detection efficiency, and large stopping ability. Among them, the semiconductor detector used for radioactive ray detection outputs signals by directly converting the absorbed ray energy into electron-hole pairs and drifting under the action of an external electric field. In practical applications, different semiconductors are selected as light-absorbing layer materials for detectors according to different applications. X-ray detectors can be divided into two types: direct type and indirect type. In comparison, dire...

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Problems solved by technology

[0003] However, there is a common problem in the X-ray detectors that are basically reported at present: the noise of the device increases sharply or the active material is thermally decomposed due to the device’s heat generation or high temperature environment, which leads to a sharp decline in the device’s performance and cannot work or cannot work.

For example, amorphous selenium (α-Se) detectors are prone to crystallization at higher room temperature due to the many structural defects in the material and the lower glass transition temperature, so the daily work needs to be kept within the range of 10°C-35°C; CdZnTe detector is an excellent room-temperature semiconductor radiation detector, but the performance of the device drops sharply due to thermally excited carrier noise in high-temperature environments; the organic-inorganic hybrid perovskite materials have organic and inorganic components. The binding force is weak, and the decomposition temperature of the intrinsic material is low, so it cannot be used in high temperature environment

Moreover, the reported perovskite materials have high intrinsic carrier concentration, narrow optical bandgap, low resistivity, and ion migration.

As the temperature increases, the intrinsic carrier concentration of the semiconductor material further increases, the resistivity decreases, and the ion migration is serious, resulting in a sharp increase in the noise of the device and a large leakage current that causes the device to heat up.

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