Laminated silicon-rich silicon carbide thin-film solar cell and preparation method thereof

Abstract

The invention discloses a laminated silicon-rich silicon carbide thin-film solar cell and a preparation method thereof. The solar cell sequentially comprises ITO conductive glass, a boron-doped amorphous silicon carbide film, a laminated silicon-rich silicon carbide film, a phosphorus-doped amorphous silicon carbide film and an aluminum electrode from bottom to top, wherein the laminated silicon-rich silicon carbide thin film is composed of multiple layers of silicon-rich silicon carbide thin films with different silicon-carbon ratios, and an embedded silicon quantum dot thin film absorption layer with different optical band gaps is formed through a laser crystallization technology. According to the invention, the laminated silicon-rich silicon carbide film absorption layers with differentsilicon-carbon ratios are designed, the optical band gap of each sub-layer is more effectively controlled, the spectral response range can be widened, and the light absorptivity is more effectively improved, thereby facilitating the obtaining of higher photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, in particular to a stacked silicon-rich silicon carbide thin film solar cell and a preparation method. Background technique [0002] Silicon-based solar cells, due to their rich raw materials and mature manufacturing processes, are considered to be the first choice for solar cells that are expected to be used on a large scale in the future. Silicon-based solar cells are also the mainstream of current and future development. In traditional crystalline silicon material solar cells, the optical bandgap of monocrystalline silicon is 1.1eV, which falls just near the peak of the solar spectrum, but due to its indirect bandgap energy band structure, its absorption coefficient for visible light is low. . At the same time, due to the transmission loss on the long-wavelength side and the thermal relaxation loss on the short-wavelength side, as well as junction loss and recombination loss, the theo...

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Problems solved by technology

[0004] However, it is difficult to control the size and uniformity of silicon quantum dots in the absorbing layer of stacked silicon quantum dot films, which affects the optical bandgap of each sublayer, resulting in a decrease in the photoelectric conversion efficiency of solar cells

There is SiO between the sub-layer and the sub-layer in the absorbing layer of the laminated silicon quantum dot film 2 Dielectric layer, which affects the transport of carriers in the longitudinal direction, resulting in a decrease in the photoelectric conversion efficiency of solar cells

In the process of forming silicon quantum dot materials, a high-temperature heat treatment process is required, which cannot achieve low energy consumption in the preparation process

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