Narrow linewidth distributed feedback semiconductor laser and preparation method thereof
A distributed feedback and laser technology, which is applied to the structure of semiconductor lasers, lasers, and optical waveguide semiconductors, can solve problems that cannot meet the application requirements, and achieve the effects of stabilizing the working wavelength, narrowing the laser line width, and reducing the line width factor
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[0041] The invention proposes a feedback semiconductor laser with narrow line width distribution and a two-layer grating structure. The distributed feedback grating includes a secondary epitaxial distributed feedback grating near the active area and an electrode sampling grating composed of periodic ohmic contacts of electrodes. Specifically, the chip structure of the laser includes an N-face electrode layer, a substrate layer, a buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, a secondary epitaxial grating layer, an etching self-stop layer, and a wrapping layer from bottom to top. layer, ohmic contact layer, passivation layer and P-side electrode layer. The cladding layer and the ohmic contact layer form a waveguide structure, and the waveguide structure is a ridge waveguide structure, and the grating structure of the laser includes a secondary epitaxial grating and an electrode sampling grating. The light-emitting surface of the laser has an...
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