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Perovskite quantum dot-polymer complex, preparation method of wavelength conversion element and light-emitting device

A wavelength conversion element and light-emitting device technology, applied in the nanometer field, can solve the problems of poor stability of perovskite quantum dots, and achieve the effect of simple preparation method and good photostability

Pending Publication Date: 2020-05-26
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of this application is to provide a method for preparing a perovskite quantum dot-polymer composite, thereby solving the problem of poor stability of perovskite quantum dots in the existing perovskite quantum dot-polymer composite

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  • Perovskite quantum dot-polymer complex, preparation method of wavelength conversion element and light-emitting device
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  • Perovskite quantum dot-polymer complex, preparation method of wavelength conversion element and light-emitting device

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Embodiment approach

[0026] According to some exemplary embodiments of the present application, the preparation method of the perovskite quantum dot-polymer composite includes: providing a precursor, including: a first precursor, the first precursor is composed of Rb + 、Cs + 、NR 4 + or [CH(NH 2 ) 2 ] + At least one of, and at least one of carboxylate anion or halogen anion, wherein, the NR 4 + where R is independently a hydrogen atom or a substituted or unsubstituted C 1 -C 10 A linear or branched alkyl group; a second precursor comprising a Pb halide, a Ge halide, a Si halide, a Sn halide, or a combination thereof; and a polymer; at or above the The step of mixing the precursors at a first temperature of the melting point of the polymers, followed by cooling.

[0027] Among the existing technologies for preparing perovskite quantum dots, the most common method is to synthesize them at low temperature, such as less than 60 degrees Celsius or at room temperature, which is also one of the o...

Embodiment 1

[0090] Embodiment 1 Preparation of wavelength conversion element

[0091] Preparation of the first precursor: 0.8g of Cs 2 CO 3 With 30 ml of octadecene and 2.5 ml of oleic acid, place into a three-necked flask, and dry the mixture at 120 °C for one hour, then at 150 °C under N 2 under heating so that Cs 2 CO 3 Reaction with oleic acid and thus obtaining the first precursor oleic acid Cs. Oleic acid Cs was precipitated from the ODE at room temperature and heated to 100 °C before injecting the reaction solution.

[0092] Preparation of the second precursor: 50 mL of octadecene, and 0.69 g of PbBr 2 Place in a three-necked flask and dry at 120°C for one hour. Then, 5 ml of oleylamine was injected thereinto at 120 °C under a nitrogen atmosphere, and the obtained mixture was stirred so that the PbBr 2 Dissolve to prepare a solution containing the second precursor.

[0093] Put the first precursor, the second precursor and 5 g of polypropylene (Sigma-Aldrich company, produc...

Embodiment 2

[0095] Embodiment 2 Preparation of wavelength conversion element

[0096] Preparation of the first precursor: 0.8g of Cs 2 CO 3 With 30 ml of octadecene and 2.5 ml of oleic acid, place into a three-necked flask, and dry the mixture at 120 °C for one hour, then at 150 °C under N 2 under heating so that Cs 2 CO 3 Reaction with oleic acid and thus obtaining the first precursor oleic acid Cs. Oleic acid Cs was precipitated from the ODE at room temperature and heated to 100 °C before injecting the reaction solution.

[0097] Preparation of the second precursor: 50 mL of octadecene, and 0.69 g of PbBr 2 Place in a three-necked flask and dry at 120°C for one hour. Then, 5 ml of oleylamine was injected thereinto at 120 °C under a nitrogen atmosphere, and the obtained mixture was stirred so that the PbBr 2 Dissolve to prepare a solution containing the second precursor.

[0098] Put the first precursor, the second precursor and 5 g of polyethylene (Sigma-Aldrich company, product...

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Abstract

The invention discloses a perovskite quantum dot-polymer complex, a preparation method of a wavelength conversion film and a light-emitting device. The preparation method of the perovskite quantum dot-polymer complex comprises the following steps: a step of providing precursors, including: a first precursor composed of at least one of Rb <+>, Cs <+>, NR4 <+> or [CH (NH2) 2] <+> and at least one ofcarboxylate anions or halogen anions, wherein in the NR4 <+>, R is independently a hydrogen atom or a substituted or unsubstituted C1-C10 linear or branched alkyl group; a second precursor includinga Pb halide, a Ge halide, a Si halide, a Sn halide, or a combination thereof; and a polymer; and a step of mixing the precursors at a first temperature at or above the melting point of the polymer, and then cooling the mixed precursors. According to the invention, the problem of poor stability of existing perovskite quantum dots can be effectively solved.

Description

technical field [0001] The present application relates to the field of nanotechnology, in particular to a perovskite quantum dot-polymer composite, a preparation method of a wavelength conversion element and a light emitting device. Background technique [0002] Perovskite quantum dots are a relatively new type of semiconductor nanoparticles. Perovskite quantum dots have the advantages of narrower half-width and simpler synthesis conditions. Therefore, perovskite quantum dots have been widely studied as excellent luminescent materials. [0003] When perovskite quantum dots are used in the field of LED lighting, perovskite quantum dots are usually dispersed in polymers. In the prior art, low-temperature in-situ synthesis is generally used to prepare perovskite quantum dots in polymers or directly disperse the synthesized perovskite quantum dots in polymer precursors and solidify them. However, perovskite quantum dots points are less stable. Contents of the invention [0...

Claims

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Application Information

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IPC IPC(8): C09K11/66C09K11/02B82Y20/00B82Y30/00B82Y40/00H01L51/50H01L27/32
CPCC09K11/665C09K11/025B82Y20/00B82Y30/00B82Y40/00H10K59/38H10K50/115
Inventor 王允军马卜
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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