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Preparation method of Cs<n>FA<1-n>PbX<3> perovskite thin film

A csnfa1-npbx3, perovskite technology, applied in semiconductor/solid-state device manufacturing, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of difficult to obtain pure equality, achieve low cost, reduce production facilities requirements, Good film forming effect

Pending Publication Date: 2020-05-08
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, current research shows that when Cs + When the composition exceeds 15%, Cs x FA 1- x PB 3 The thin film will undergo phase separation, and it is difficult to obtain the pure phase of Cs x FA 1-x PB 3 perovskite film

Method used

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  • Preparation method of Cs&lt;n&gt;FA&lt;1-n&gt;PbX&lt;3&gt; perovskite thin film
  • Preparation method of Cs&lt;n&gt;FA&lt;1-n&gt;PbX&lt;3&gt; perovskite thin film
  • Preparation method of Cs&lt;n&gt;FA&lt;1-n&gt;PbX&lt;3&gt; perovskite thin film

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Embodiment 1

[0039] This embodiment relates to a kind of cesium iodide (CsI), iodoformamidine (FAI), lead iodide (PbI) 2 ) and dimethylamine hydroiodide (DMAI) were dissolved in DMF and then spin-coated to prepare pure phase Cs 0.5 FA 0.5 PB 3 A method for a perovskite thin film, the method comprising the steps of:

[0040] 1) 0.091g CsI, 0.060g FAI, 0.323g PbI 2 and 0.121g DMAI were dissolved in 1mL DMF to obtain precursor solution A; in the above solution, CsI, FAI, PbI 2 , The molar ratio of DMAI is 0.5:0.5:1:1;

[0041] 2) The precursor solution A obtained above was spin-coated on the FTO glass at 3000rpm for 30s, and annealed at 210°C for 5min to obtain a perovskite film.

[0042] figure 1 It is the X-ray diffraction pattern of Example 1, no phase separation is found from the pattern, which proves that the Cs of pure phase has been successfully prepared 0.5 FA 0.5 PB 3 perovskite thin film. figure 2 It is the ultraviolet-visible absorption spectrum diagram of Example 1, it ...

Embodiment 2

[0044] Present embodiment method is the same as embodiment 1, and difference is that CsI, FAI, PbI in step 1) 2 , The molar ratio of DMAI is 0.9:0.1:1:1.

[0045] image 3 Be the X-ray diffraction pattern of embodiment 2, do not find phase separation from the pattern, show that obtained the Cs of pure phase 0.9 FA 0.1 PB 3 perovskite thin film. Figure 4 It is the ultraviolet-visible absorption spectrum diagram of Example 2, it can be seen that the characteristic absorption of perovskite appears at 742nm. The obtained perovskite film has a band gap of 1.67eV.

Embodiment 3

[0047] Present embodiment method is the same as embodiment 1, and difference is that CsI, FAI, PbI in step 1) 2 , The molar ratio of DMAI is 0.3:0.7:1:1.

[0048] Figure 5 Be the X-ray diffraction pattern of embodiment 3, do not find phase separation from the pattern, show that obtained the Cs of pure phase 0.3 FA 0.7 PB 3 perovskite thin film. The obtained perovskite film has a band gap of 1.58eV.

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Abstract

The invention discloses a preparation method of a Cs<n>FA<1-n>PbX<3> perovskite thin film, and particularly relates to a preparation method of a high-quality Cs<n>FA<1-n>PbX<3> (0<n<=1) perovskite thin film with phase separation inhibition. The method comprises the following steps: S1, mixing CsX, FAX, PbX<2> and DMAX, and dissolving in a solvent to obtain a precursor solution A; and S2, coating asubstrate with the precursor solution A, and annealing the coated substrate to remove the solvent and DMAX, thereby obtaining the stable Cs<n>FA<1-n>PbX<3> perovskite thin film, wherein X is halogen,and 0<n<=1. The Cs<n>FA<1-n>PbX<3> perovskite thin film prepared by the method has the characteristics of no phase separation, high crystallinity, compact and flat surface, high phase stability, convenience in operation, lower cost and the like, and is convenient for large-scale production in factories.

Description

technical field [0001] The present invention relates to a kind of Cs n FA 1-n wxya 3 Preparation method of perovskite thin film, phase separation suppressed high quality Cs prepared by ion exchange method n FA 1-n PB 3 (0<n≤1) The method of perovskite thin film material, specifically, involves a method of introducing an organic salt into the precursor to control the crystallization process of the mixed cation perovskite phase, and finally prepare a pure phase of highly stable Cs n FA 1-n PB 3 (0<n≤1) method for perovskite thin films. Background technique [0002] Organic-inorganic hybrid perovskite materials have shown great prospects in optoelectronic fields such as solar cells, luminescence, and detectors due to their excellent photoelectric properties, long carrier diffusion distance, and low preparation cost, and have been widely accepted. s concern. However, the stability of perovskite materials is still a commercial problem that needs to be solved urgent...

Claims

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Application Information

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IPC IPC(8): H01L51/48C07C257/12
CPCC07C257/12H10K71/12H10K71/40Y02P70/50
Inventor 赵一新钱旭芳王兴涛刘晓敏王勇张太阳陈皓然史杰琳武敏
Owner SHANGHAI JIAO TONG UNIV
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