MoON coating and preparation method and application thereof

A coating and pulse magnetic technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problem of electrochemical electrode energy storage performance affecting electrodes, difficult flexible electrodes and flexible energy storage devices, Reduce the effective specific surface area of ​​the electrode and other issues to achieve the effect of improving electrical contact, excellent comprehensive electrochemical performance, and good conductivity

Active Publication Date: 2020-05-05
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has two disadvantages: first, the binder will prevent part of the active surface of the electrode from contacting the electrolyte, reduce the effective specific surface area of ​​the electrode, and increase the internal resistance of the electrode, affecting the electrochemical electrode energy storage performance of the electrode; The second is that the bonding force of the electrode made of binder is not high, and the powder falls off or separates from the collector during charging and discharging, which will cause a significant decrease in the cycle life of the electrode.
Electrodes that grow active materials on metal foam collectors by chemical methods such as hydrothermal method can avoid the use of adhesives, but such electrodes are poorly flexible, making it difficult to make flexible electrodes and flexible energy storage devices.

Method used

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  • MoON coating and preparation method and application thereof
  • MoON coating and preparation method and application thereof
  • MoON coating and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Fix the pretreated P-doped conductive silicon or flexible graphite film substrate on the workpiece turret in the coating chamber, so that the substrate is facing the surface of the molybdenum target, the distance between the target and the base is 26cm, and the rotation speed of the turret is adjusted to 10rpm. The speed is 0rpm, turn on the heater to raise the temperature to 300°C, and pre-pump the background vacuum to 5.0×10 -3 Pa;

[0038] 2. Open the Ar gas flow valve, adjust the air pressure to 0.5Pa, turn on the DC pulse bias power supply, adjust the substrate bias voltage to -600V, duty cycle 30%, frequency 40kHz, open the anode layer ion source and adjust the current 5A to conduct Ion source etching and cleaning for 5 minutes;

[0039] 3. Reduce the substrate bias to -150V, turn on Ar, N 2 Gas flow valve, adjust Ar / N 2 The flow ratio is 1:4, adjust the total air pressure to 0.9Pa, turn on the Cr arc target, adjust the target current to 80A, and deposit for...

Embodiment 2

[0049] 1. Fix the pretreated P-doped conductive silicon or flexible graphite film substrate on the workpiece turret in the coating chamber, so that the substrate is facing the surface of the molybdenum target, the distance between the target and the base is 26cm, and the rotation speed of the turret is adjusted to 10rpm. The speed is 0rpm, turn on the heater to raise the temperature to 300°C, and pre-pump the background vacuum to 5.0×10 -3 Pa;

[0050] 2. Open the Ar gas flow valve, adjust the air pressure to 0.5Pa, turn on the DC pulse bias power supply, adjust the substrate bias voltage to -600V, duty cycle 30%, frequency 40kHz, open the anode layer ion source and adjust the current 5A to conduct Ion source etching and cleaning for 5 minutes;

[0051] 3. Reduce the substrate bias to -150V, turn on Ar, N 2 Gas flow valve, adjust Ar / N 2 The flow ratio is 1:4, adjust the total air pressure to 0.9Pa, turn on the Cr arc target, adjust the target current to 80A, and deposit for...

Embodiment 3

[0055] The MoON coating was prepared by the pulse magnetron sputtering deposition method in Example 1, and the atomic percentage content of each element in the layer was: Mo: 26 at.%, O: 40 at.%, N: 34 at.%.

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Abstract

The invention belongs to the technical field of film electrodes and surface protective coatings, and discloses a MoON coating and a preparation method and application thereof. The MoON coating is prepared by adopting a pulse magnetron sputtering deposition method, and comprises the following elements of, in atomic percent, 26%-41 at.% of Mo, 24%-64 at.% of O and 9%-36 at.% of N. According to the MoON coating and preparation method and the application thereof, the pulse magnetron sputtering deposition method is adopted, the advantages of molybdenum nitride and molybdenum oxide are combined, theprepared MoON coating with the excellent electrochemical performance has the advantages of being good in film-substrate binding force, high in capacitance value, long in cycle life and the like, theperformance of a transition metal compound thin film electrode is remarkably improved, and the MoON coating can be deposited on a flexible substrate as an electrode, so that the MoON coating has a wide application prospect in a flexible energy storage device.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin film electrodes and surface protective coatings, and more specifically relates to a MoON coating and its preparation method and application. Background technique [0002] Most transition metal compounds currently used in supercapacitor electrodes are oxides and nitrides. Transition metal oxides have a high theoretical capacitance value, and can undergo redox reactions for chemical energy storage, but have poor conductivity, large charge transfer resistance, and the crystal structure is easily destroyed during electrochemical charging and discharging, which affects cycle life; The transition metal nitrides have better conductivity and high chemical stability, but because they only have physical absorption / desorption energy storage in the electric double layer, the theoretical capacitance value is low. Combining oxides and nitrides to make oxynitrides can combine the advantages of nitri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/06C23C14/32C23C14/54H01G11/26
CPCC23C14/352C23C14/3485C23C14/0676C23C14/024C23C14/325C23C14/0641C23C14/022C23C14/0021C23C14/54H01G11/26Y02E60/13
Inventor 张腾飞张银团王启民吴正涛
Owner GUANGDONG UNIV OF TECH
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