Chemically amplified photoresist

Abstract

To provide chemically amplified resist which is excellent in resolution, focusing and size accuracy as well by preventing problem of T-shaped resist pattern and reinforcing exposure dependence of solution speed, a mixture of t-BOC protected polyhydroxystyrene polymers having different molecular weight are used as a basic polymer of chemically amplified resist together with PAG. Preferable molecular-weight ratio and mixing ratio of the mixture are 1:5 to 1:20, and 10 to 30 parts by weight of low molecular-weight polymer to 100 parts of high molecular-weight polymer, respectively.

Description

technical field [0001] The present invention relates to chemically amplified photoresists comprising a polyhydroxystyrene polymer having a protecting group, the polarity of which is switched by an acid catalyst, and a photoacid generator. This photoresist can be used as a positive resist, for example, for pattern generation, where the positive resist is formed on a semiconductor substrate, subjected to KrF laser projection exposure through a mask or a master plate, and subjected to PEB (post-exposure baking) treatment , and developed with a developer. Background technique [0002] In the conventional photolithography technology, the positive resist whose solubility is suppressed is mainly used, wherein novolac polymer is used as the matrix polymer, and naphthoquinonediazido is added as the pair g-line (436nm) or I-line (365nm) exposed photosensitizer. However, with the development of fine etching of semiconductor integrated circuits, photolithography methods using extreme ...

AI Technical Summary

Problems solved by technology

With this photoresist material, although the generation of the T-shaped photoresist pattern is suppressed to some extent, another problem arises, that is, the upper edge of the cross-section pattern becomes arc-shaped, and the photoresist pattern The rectangular shape of the is broken, also resulting in a loss of resolution

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