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Bismuth ferrite based thin film having high polarization intensity and large strain characteristics and preparation method thereof

A polarization, bismuth ferrite-based technology, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problems of difficult preparation and poor film performance, and achieve good crystallinity, good compactness, and smoothness. high degree of effect

Inactive Publication Date: 2020-03-31
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Some studies have reduced leakage conductance by doping manganese in the bismuth ferrite-barium titanate thin film system (see CurrentApplied Physics, 16, 10 (2016)), or reducing the influence of bismuth volatilization during film deposition by excessive bismuth (see Ceramics International,39,(2013)), but the performance of the film is still poor
In conclusion, a bismuth ferrite-barium titanate thin film with high polarization strength and large strain performance has not been reported due to the difficulty of preparation

Method used

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  • Bismuth ferrite based thin film having high polarization intensity and large strain characteristics and preparation method thereof
  • Bismuth ferrite based thin film having high polarization intensity and large strain characteristics and preparation method thereof
  • Bismuth ferrite based thin film having high polarization intensity and large strain characteristics and preparation method thereof

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Effect test

Embodiment 1

[0041] A method for preparing a bismuth ferrite thin film with high polarization strength and large strain performance, comprising the following steps:

[0042] (1) Target preparation

[0043] By Bi 2 o 3 、BaCO 3 、TiO 2 , MnCO 3 , Fe 2 o 3 Powder is used as raw material, and 0.7Bi is prepared according to the stoichiometric ratio of corresponding elements x FeO 3 -0.3BaTiO 3 +ywt%MnCO 3 Ceramic target, where x=1.1, y=0.1. The sintering temperature is 1100°C. The sintering time is 240min. The sintering atmosphere is sintering in air.

[0044] (2) Treatment of the substrate

[0045] 0.7%Nb-SrTiO with (100) orientation 3 For a single crystal substrate, the substrate is ultrasonically cleaned with acetone and absolute ethanol in sequence, rinsed with deionized water, dried with high-purity nitrogen, fixed on the sample tray with silver paste, and put the sample tray into the vacuum coating chamber on the sample tray rack in the chamber, close the vacuum chamber, an...

Embodiment 2

[0052] The difference between this embodiment and embodiment 1 is that the temperature of the substrate in step (3) is 650°C. Other steps and parameters are the same as in Example 1.

Embodiment 3

[0054] The difference between this embodiment and embodiment 1 is that the distance between the substrate and the target in step (3) is 45 mm. Other steps and parameters are the same as in Example 1.

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Abstract

The invention discloses a bismuth ferrite based thin film having high polarization intensity and large strain characteristics and a preparation method thereof. The bismuth ferrite based thin film includes a substrate, a bismuth ferrite based ferroelectric layer, and a top electrode, wherein the bismuth ferrite based ferroelectric layer has the composition of 0.7BixFeO3-BaTiO3+ywt%MnCO3, wherein x= 1.0-1.2, y = 0.1-0.2. The bismuth ferrite based ferroelectric thin film is highly oriented, and has a ferroelectric hysteresis loop of great rectangularity at room temperature, is high in polarization intensity, can reach up to 120 [mu]C / cm<2> in self intensity of polarization, can reach up to 1.26% in monopole strain, and has excellent strain performance.

Description

technical field [0001] The invention belongs to the field of functional thin films, and relates to a ferroelectric thin film material and its preparation, in particular to a bismuth ferrite-based thin film with high polarization and large strain characteristics and a preparation method thereof. Background technique [0002] Bismuth ferrite (BiFeO 3 ) is a multiferroic material with both ferroelectricity and antiferromagnetism at room temperature, and in theory, the remnant polarization of its film can be 2-3 times that of lead-containing materials widely used now, so iron Bismuth oxide materials have broad application prospects in memory, high-capacitance and high-inductance integrated electronic components, and spintronic devices, and its research has increasingly attracted people's attention. [0003] Bismuth ferrite is the only ferroelectric Curie temperature (T c =1143K) and magnetic ordering temperature (T n =643K) are multiferroic materials above room temperature. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/90C01G49/00C04B35/26C04B35/622
CPCC01G49/00C01P2002/72C01P2002/78C04B35/2633C04B35/622C04B41/009C04B41/52C04B41/90C04B2235/3215C04B2235/3232C04B2235/3262C04B2235/3272C04B2235/3298C04B2235/656C04B2235/6583C04B35/47C04B41/5036C04B41/4529C04B41/5116C04B41/4572
Inventor 梁瑞虹胡钰晴赵祥永董显林
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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