Array substrate, preparation method thereof and display panel

Abstract

The invention discloses an array substrate, a preparation method thereof and a display panel, which are used for preventing a semiconductor region of an active layer of a thin film transistor from being illuminated, improving the working stability of the thin film transistor, avoiding uneven display pictures and improving the display effect. The array substrate comprises a substrate body, a shading layer located on the substrate body, a buffer layer located on the shading layer, an active layer located on the buffer layer and a shading part. The buffer layer is provided with a groove. The active layer includes a semiconductor region, and a first conductive region and a second conductive region connected to the semiconductor region. The semiconductor region and the shading part fill the groove. The orthographic projection of the shading part on the substrate is annular, the side surface of the semiconductor region is completely surrounded by the shading part, and the first conductor region and the second conductor region are located above the shading part and the semiconductor region. The orthographic projection of the shading layer on the substrate covers the orthographic projection of the semiconductor region on the substrate.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display panel. Background technique [0002] At present, organic light-emitting diode (Organic Light-Emitting Diode, OLED) display products have the advantages of large screen brightness, wide color gamut, low power consumption, and large viewing angle, and have been vigorously developed. The OLED display panel includes a thin film transistor (Thin Film Transistor, TFT), and the TFT in the pixel circuit usually uses an oxide semiconductor material as an active layer, and the oxide semiconductor material can be, for example, Indium Gallium Zinc Oxide (Indium Gallium Zinc Oxide, IGZO). The structure of the display panel in the prior art is as figure 1 as shown, figure 1 Only the base substrate 1, the light shielding layer 2, the buffer layer 3, the semiconductor region 4 of the active layer, the gate insulating...

AI Technical Summary

Problems solved by technology

The structure of the display panel in the prior art is as figure 1 as shown, figure 1 Only the base substrate 1, the light shielding layer 2, the buffer layer 3, the semiconductor region 4 of the active layer, the gate insulating layer 5 and the gate 6 are shown, from figure 1 It can be seen from the figure that the semiconductor region 4 of the active layer is easily affected by the light irradiated from the side, resulting in poor stability of the TFT, easy to cause the phenomenon of start-up voltage drift, and resulting in uneven display

[0003] To sum up, in the display panel of the prior art, the semiconductor region of the active layer of the thin film transistor is easily affected by light, and the start-up voltage drift is prone to occur, resulting in poor stability of the TFT, resulting in uneven display images, and affecting the display effect.

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