Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon wafer surface grinding device

A silicon wafer surface and grinding device technology, which is applied in the direction of grinding devices, grinding machine tools, grinding tools, etc., can solve the problems of reduced workpiece precision, poor working environment, environmental pollution, etc., and achieve the goals of increased productivity, convenient operation, and improved polishing efficiency Effect

Pending Publication Date: 2020-03-24
HOHAI UNIV CHANGZHOU
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the device uses chemical polishing liquid, it is easy to cause environmental pollution, and the working environment is poor, the efficiency is low, and the precision of the workpiece is likely to be reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon wafer surface grinding device
  • Silicon wafer surface grinding device
  • Silicon wafer surface grinding device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] In order to better understand the essence of the present invention, the present invention will be further described below in conjunction with specific embodiments and accompanying drawings.

[0017] The present invention is applicable to the technical field of surface treatment, and is especially suitable for grinding the surface of a silicon wafer. The structure of a specific embodiment is as follows figure 1 As shown, it includes a plasma spray gun 1, a servo motor 10, a laser ranging component, a deionized water supply structure and an ultrasonic enhancement structure. The servo motor 10 is connected with the plasma spray gun 1, and the servo motor 10 drives the plasma sub-spray gun to perform axial rotation and feed movement. The plasma torch 1 comprises a plasma channel 4 , a nozzle 5 , a plasma torch control system 16 and a plasma generator 17 . The plasma torch control system 16 is located inside the plasma torch 1 and communicated with the plasma generator 17 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon wafer surface grinding device, which belongs to the technical field of surface treatment and comprises a plasma spray gun, a servo motor and a laser ranging assembly,the servo motor is connected with the plasma spray gun; the plasma spray gun comprises a nozzle, and a plasma spray gun control system, a plasma generator and a plasma channel which are positioned inthe plasma spray gun; the plasma spray gun control system is in communication connection with the plasma generator and the servo motor; the plasma generator is connected with the plasma channel and the nozzle in sequence; the laser ranging assembly is connected with the plasma spray gun; and a plasma channel outlet is arranged at the joint of the nozzle and the plasma channel. According to the invention, automatic surface grinding can be carried out on the silicon wafer, and environmental pollution is reduced.

Description

technical field [0001] The invention relates to a silicon wafer surface grinding device, which belongs to the technical field of surface treatment. Background technique [0002] Surface grinding of silicon substrates has always been the focus of solar energy and chip manufacturing, and its device and method can make the surface of the workpiece smoother and brighter. Commonly used surface grinding and stripping processes for silicon substrates include chemical stripping and mechanical stripping. However, chemical stripping is usually carried out in a hydrofluoric acid and nitric acid solution configured in a certain proportion, and the production environment is harsh. Mechanical stripping also presents issues of production environment and composition. Therefore, it has long processing time, poor operating conditions, need for follow-up processing, etc., and has high cost limitations. The existing silicon substrate polishing device (Chinese Patent Publication No.: CN101850...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L31/18B24B37/04B24B37/11
CPCH01L21/67092H01L31/18B24B37/04B24B37/11Y02P70/50
Inventor 蒋永锋易恬安包晔峰陈秉岩
Owner HOHAI UNIV CHANGZHOU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products