Silicon-based micro LED chip and manufacturing method thereof

Abstract

The invention discloses a silicon-based micro LED chip and a manufacturing method thereof. The chip comprises a silicon substrate, a plurality of light emitting structures, cutting grooves and an organic insulating layer, wherein the cutting grooves are formed among the light emitting structures. The chip is advantaged in that the silicon substrate is adopted to replace a sapphire substrate, so damage to a gallium nitride material and a micro LED chip caused by N2 generated by decomposition after gallium nitride absorbs laser during laser stripping of the sapphire substrate is avoided, the silicon substrate is removed through a physical grinding and chemical corrosion two-step method, the light emitting structure can be protected against damage while the silicon substrate is effectively removed, and the removal yield and reliability of the substrate are improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a silicon-based micro-LED chip and a manufacturing method thereof. Background technique [0002] At present, the mainstream screen display technologies are mainly concentrated on LCD and AMOLED. Among them, LCD has a long life, but needs backlight, and the contrast is not high, and it cannot be bent; The problem is mainly the problem of screen burn-in. [0003] For Micro LED, the chip size is less than 100 μm, and the size of a single chip is not even 1% of the original LED chip. The LED display is a high-density micro-scale micro-LED array integrated on a chip, and each pixel of the LED display can be addressed and individually driven to light up. The LED display is made of inorganic materials, and its lifespan and stability are significantly better than that of the AMOLED LED display, and it is not prone to screen burn-in and aging. At the same time, it also has...

AI Technical Summary

Problems solved by technology

However, this method of substrate removal is difficult to remove because GaN absorbs laser light and decomposes the N 2 Cause damage to GaN materials and MicroLED chips, resulting in chip leakage or breakage, greatly affecting the reliability of LED chips

In addition, after removing the sapphire substrate, Micro LED has far exceeded the precision limit of traditional cutting and splitting equipment due to its size less than 100 μm. Therefore, cutting and separation technology is also a major bottleneck restricting the development of Micro LED.

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