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Method of improving photoelectric properties of heterojunction solar cell

A technology of solar cells and photoelectric properties, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as complex processes, achieve simple process steps, reduce deposition thickness, and low process and material costs

Active Publication Date: 2020-02-18
湖州市鹑火光电有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above processes all require the step of removing the mask in the later stage, and the process is complicated

Method used

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  • Method of improving photoelectric properties of heterojunction solar cell
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  • Method of improving photoelectric properties of heterojunction solar cell

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Embodiment Construction

[0034] In order to make the content of the present invention more clearly understood, the present invention will be further described in detail below based on the embodiments and in conjunction with the accompanying drawings.

[0035] like figure 1 As shown, the method for applying the present invention to improve the photoelectric performance of heterojunction solar cells includes:

[0036] (a) performing damage removal and surface texturing on the N-type single crystal silicon substrate layer;

[0037] (b) depositing an intrinsic amorphous silicon film on both sides of the N-type single crystal silicon substrate layer;

[0038] (c) Depositing a P-type amorphous silicon film and an N-type amorphous silicon film on the two surfaces where the intrinsic amorphous silicon film is deposited;

[0039] (d) depositing a tin-doped indium oxide transparent conductive film on the surface of the P-type amorphous silicon film;

[0040] (e) depositing a tin-doped indium oxide transparen...

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Abstract

The invention discloses a method of improving the photoelectric properties of a heterojunction solar cell. A covering layer has the functions of surface antireflection, carrier conduction and electrode selective deposition mask, and the method comprises the following steps of: (a) preparing a heterojunction solar cell substrate, (b) depositing a metal seed layer gate, (c) depositing a covering layer in the non-gate region, (d) drying the covering layer, (e) electrochemically depositing a metal electrode in the gate region, (f) post-processing a covering layer, and (g) drying the cover layer. According to the method disclosed in the invention, the complexity of an electrochemical deposition metal electrode process can be obviously reduced, the polymer covering layer is used, the photoelectric property is obviously improved after treatment, the polymer covering layer can also be used as a transparent conductive film of the heterojunction solar cell, and, according to the method, the process of removing the mask by an electrochemical deposition electrode of a conventional heterojunction solar cell is avoided, the transparent conductive film can be used less or not used, the conversionefficiency of the heterojunction solar cell is improved, the production cost is reduced, and the method has remarkable advantages in industrial production.

Description

technical field [0001] The invention belongs to the technical field of heterojunction solar cells, and relates to a method for improving the photoelectric performance of heterojunction solar cells. Background technique [0002] The principle of solar cells is based on the photovoltaic effect, a device that directly converts solar energy into electrical energy, and is also an important part of the practical application of solar energy. At present, crystalline silicon solar cells have become the mainstream of the photovoltaic industry. More than 80% of the solar cells on the market are crystalline silicon solar cells. However, the cost of producing monocrystalline silicon is still relatively high, the process is complicated, the overall conversion efficiency is not high, and the high temperature performance Poor, light-induced attenuation, etc. restrict its further development. [0003] Heterojunction solar cells deposit intrinsic amorphous silicon films on both sides of n-ty...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/0747H01L31/0224
CPCH01L31/022466H01L31/0747H01L31/202Y02E10/50Y02P70/50
Inventor 俞健李君君何佳龙李兵川陈涛黄跃龙
Owner 湖州市鹑火光电有限公司
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