Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A vapor chamber half-shear forming method

A technology of soaking plate and cover plate, used in semiconductor devices, indirect heat exchangers, lighting and heating equipment, etc., can solve problems such as weak support and negative impact on the strength of soaking plate

Active Publication Date: 2021-04-20
DONGGUAN LINGJIE PRECISION MACHINING TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface of the internal structure obtained in this way is smooth and the supporting effect is weak, which has a negative impact on the strength of the vapor chamber

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A vapor chamber half-shear forming method
  • A vapor chamber half-shear forming method
  • A vapor chamber half-shear forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] figure 1 and figure 2 A vapor chamber according to the method of the present invention is schematically shown. The vapor chamber stamping method provided by the present invention includes the following steps:

[0034] (1) Two plates are provided, which are divided into the first cover plate 100 and the second cover plate 200 . The first cover plate 100 and the second cover plate 200 are square copper plates with the same size.

[0035] (2) Use a punch press to perform semi-shear punching on the middle part of the first cover plate 100 from the bottom to form a plurality of support columns 101 . There are gaps 102 between the support columns 101 , and the gaps 102 between the plurality of support columns 101 communicate with each other. After the half-shear stamping, there is a certain connection thickness between the support column 101 and the starting plate surface. In this way, the first cover plate 100 can be prevented from being broken due to the half-shearing ...

Embodiment 2

[0043] image 3 with Figure 4 Schematically shows another vapor chamber according to the method of the present invention. The difference from Embodiment 1 is that the first cover plate 100 and the second cover plate 200 are both metal aluminum plates, and the first cover plate 100 is The half-cut support column 101 is a square cylinder, and the support column 101 is in contact with one side of the liquid-absorbent core 300 .

[0044] In addition, in the process, the liquid-absorbent core 300 is fixed at the middle position of the second cover plate 200 by sintering, and when the first cover plate 100 and the second cover plate 200 are attached to each other, the liquid-absorbent core 300 is just in line with the embedded Fit in the inside of welding flange edge 103. In addition, the welding method of the second cover plate 200 adopts diffusion welding.

Embodiment 3

[0046] Figure 5 with Figure 6 Schematically shows the structure of the first cover plate 100 of another heat chamber according to the present invention. The arrangements are different. In this embodiment, the four support columns 101 are close to each other to form a local support unit. The multiple local support units are distributed in an array, and there are gaps 102 inside the local support units, and there are gaps 102 between the multiple local support units. The support column 101 is in contact with one side of the liquid-absorbent core 300 . In addition, the edge of the second cover plate 200 is processed into a positioning block 201 through a bending process, and the positioning block 201 can engage with the welding flange 103 on the edge of the first cover plate 100 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a half-shear forming method for a soaking plate, comprising the following steps: providing a first cover plate and a second cover plate, forming a plurality of support columns in the middle of the first cover plate by semi-shear stamping, and forming a plurality of supporting columns at the edge Half-cut into welding flanges and reserve the air outlet; after attaching the heat absorbing core to the inside of the first cover or the second cover, fasten the second cover to the first cover and follow the welding method The blue edge is sealed to form a cavity; the working fluid is injected into the cavity through the air outlet, and then the interior of the cavity is evacuated to form a negative pressure; finally, the air outlet is sealed to make a soaking plate. The invention manufactures the soaking plate cover by the semi-shear stamping method, which reduces the production cost and is beneficial to environmental protection; the positioning block is arranged to ensure the positioning accuracy and the qualified rate of the product is improved; It reduces the production cycle of the entire process and realizes efficient production.

Description

technical field [0001] The invention relates to the technical field of vapor chamber manufacturing, in particular to a method for forming a vapor chamber by half-shearing. Background technique [0002] With the rapid development of 5G wireless communications, radar, drones, satellites and other fields, the application prospects of high-power radio frequency chips are becoming more and more broad. The operating speed of the chip will be greatly improved, and the heat generated by it will also increase accordingly. Ensuring its stable operation has become the top priority. Therefore, the demand and challenges for the vapor chamber will also follow, and its industrial layout will be accelerated. There is no delay. [0003] The upper and lower covers of the traditional vapor chamber are manufactured by wet etching. This method uses a large amount of oxidants and strong acids, and the waste water generated causes great pollution to the environment. At the same time, this process...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): F28D15/02F28D15/04H01L21/48H01L23/367
CPCF28D15/0283F28D15/04H01L21/4878H01L23/3672
Inventor 李海禄梁平平李学华
Owner DONGGUAN LINGJIE PRECISION MACHINING TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com