Preparation method of multi-layer metal nanometer structure based on two-dimensional material

A two-dimensional material and multi-layer metal technology, which is applied in the direction of metal material coating technology, nanotechnology, coating, etc., can solve the problems of inability to process sub-nanometer gaps and small structure density

Active Publication Date: 2019-12-27
BEIJING UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

Today's methods for preparing metal nanostructures, such as nanoimprinting and electron beam exposure, only process single-layer structures, the structure density is small, and sub-nanometer gaps cannot be processed.

Method used

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  • Preparation method of multi-layer metal nanometer structure based on two-dimensional material
  • Preparation method of multi-layer metal nanometer structure based on two-dimensional material
  • Preparation method of multi-layer metal nanometer structure based on two-dimensional material

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Embodiment Construction

[0016] Using the method proposed by the present invention to prepare a multi-layer sub-nanometer gap metal nanostructure using an AAO template, the specific implementation is as follows:

[0017] S1. Soak the ultra-thin AAO template in acetone solution for 15 minutes to remove the PMMA support layer.

[0018] S2. Put the Si sheet into the sulfuric acid hydrogen peroxide solution and heat it for 2 minutes for hydrophilic treatment to prevent the AAO template from sticking to the Si sheet.

[0019] S3. Transfer the AAO film to clean water with a transfer Si sheet to clean away the residual acetone, and the surface tension of the water will make the AAO film float on the water surface for easy transfer to the substrate.

[0020] S4. Use the substrate to pick up the AAO film from the water, dry it, and put it into a metal sputtering device to sputter the metal film.

[0021] S5. Stick the AAO film with tape and tear it off. Since the thickness of the metal is much smaller than th...

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Abstract

The invention discloses a preparation method of a multi-layer metal nanometer structure based on a two-dimensional material, and belongs to the field of novel nanometer structure machining. The preparation process of the multi-layer metal nanometer structure mainly comprises the following four steps that (1) an ultra-thin AAO template is transferred to a substrate which is already subjected to hydrophilic treatment; (2) metal is uniformly deposited into a hole of the AAO template according to a sputtering method; (3) the AAO template on the substrate is removed by a tape in a sticking mode, one layer of h-BN is transferred onto the substrate, and then a layer of ultra-thin AAO template is transferred onto the h-BN; and (4) the substrate is placed in sputtering equipment to deposit a layerof metal again, the AAO template is removed, and the third step and the fourth step are repeated to carry out the next-layer nano-particle deposition. The preparation method is simple in process, lowin cost, strong in process repeatability and good in process parameter control. A multi-layer metal nanostructure array with periodicity can be prepared in a large area.

Description

technical field [0001] The invention relates to a method for large-scale preparation of periodic multilayer metal nanostructures, belongs to the technical field of novel nano-processing, and can be applied to devices such as biochemical sensing and photoelectric detection. Background technique [0002] The unique nano-optical properties of metal nanostructures make them play a vital role in biochemical sensing, optoelectronic devices and other applications. The free electrons inside the metal will generate surface plasmon resonance under the action of a certain external light field, which can greatly enhance the electromagnetic field around the nanostructure, and make the metal nanostructure very sensitive to the change of the refractive index nearby. Due to its smaller metal nanostructure spacing and greater structure density per unit area, the multilayer metal structure makes the electromagnetic field enhancement more significant, which plays an important role in enhancing...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/30C23C14/16C23C14/04C23C14/58B82Y40/00
CPCC23C14/35C23C14/30C23C14/165C23C14/16C23C14/042C23C14/0005C23C14/5873C23C14/588B82Y40/00
Inventor 解意洋胡良臣王秋华庞伟董毅博徐晨
Owner BEIJING UNIV OF TECH
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