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Surface acoustic wave filter with high temperature stability and preparation method and application thereof

A filter and stability technology, applied in the field of microelectronics, can solve problems such as large temperature coefficient, changes in electrical performance parameters, frequency drift, etc., and achieve stable performance, stability, long service life, and high yield.

Pending Publication Date: 2019-12-20
BEIJING ZHONGXUN SIFANG SCI & TECH +1
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, provide a surface acoustic wave filter with high temperature stability and its preparation method, to solve the electrical properties such as frequency drift caused by the large temperature coefficient of the existing SAWF Insufficient parameter variation

Method used

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  • Surface acoustic wave filter with high temperature stability and preparation method and application thereof
  • Surface acoustic wave filter with high temperature stability and preparation method and application thereof
  • Surface acoustic wave filter with high temperature stability and preparation method and application thereof

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preparation example Construction

[0034] Correspondingly, the embodiment of the present invention also provides a preparation method of the above-mentioned surface acoustic wave filter with high temperature stability. The preparation method of the surface acoustic wave filter combines figure 1 , the process flow of the preparation method of the surface acoustic wave filter is as follows Image 6 As shown, it includes the following steps:

[0035] S01: preparing an IDT electrode 2 on a plane 11 of a piezoelectric substrate 1;

[0036] S02: Deposit an insulating protective film layer on the plane 11 of the piezoelectric substrate 1, and make the insulating protective film layer cover the IDT electrode 2;

[0037] S03: Perform etching treatment on the outer surface of the insulating protection film layer, so that a plurality of protrusions 31 distributed at intervals are formed on the surface.

[0038] Specifically, in the above step S01, the method for preparing the IDT electrode 2 on the piezoelectric substr...

Embodiment 11

[0064] This embodiment provides a surface acoustic wave filter and a preparation method thereof. The structure of the SAW filter is as figure 1 As shown, the structure of the surface acoustic wave filter is: piezoelectric substrate 1 / interdigital transducer electrodes 2 / insulating protection layer 3 . Wherein, the piezoelectric substrate 1 is LiTaO 3 , its Euler angle (0, θ, 0) θ is 38°; the material of the IDT electrode 2 is copper, and its thickness is 0.05λ; the material of the insulating protection layer 3 is SiO 2 , its total thickness is 0.3λ, and the outer surface of the insulating protective layer 3 is formed with a plurality of projections 31 distributed at intervals, and the position of the formation of the projections 31 is the same as that of the single electrode of the IDT electrode 2 Correspondingly, the distance between adjacent protrusions 31 is 0.6 μm, the width A at the top of the protrusions 31 is smaller than the width B at the root, and the ratio of ...

Embodiment 12

[0066] This embodiment provides a surface acoustic wave filter and a preparation method thereof. The structure of the SAW filter is as figure 1 As shown, the structure of the surface acoustic wave filter is: piezoelectric substrate 1 / interdigital transducer electrodes 2 / insulating protection layer 3 . Wherein, the piezoelectric substrate 1 is LiTaO 3 , its Euler angle (0, θ, 0) θ is 42°; the material of the IDT electrode 2 is Al and Cu alloy, and its thickness is 0.045λ; the material of the insulating protective layer 3 is SiO 2 , its total thickness is 0.31λ, and the outer surface of the insulating protective layer 3 is formed with a plurality of protrusions 31 distributed at intervals, and the positions of the protrusions 31 are formed in the same position as the single electrode of the IDT electrode 2 Correspondingly, the distance between adjacent protrusions 31 is 0.8 μm, the width A at the top of the protrusions 31 is smaller than the width B at the root, and the r...

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Abstract

The invention discloses a surface acoustic wave filter with high temperature stability and a preparation method and application thereof. The surface acoustic wave filter comprises a piezoelectric substrate which is provided with at least one plane; an interdigital transducer electrode, wherein the interdigital transducer electrode is fixedly arranged on the plane of the piezoelectric substrate; aninsulating protective layer provided with two opposite surfaces, wherein one surface of the insulating protective layer is laminated and combined on the plane of the piezoelectric substrate and covers the interdigital transducer electrode; and a plurality of bulges which are distributed at intervals are formed on the other surface. The surface acoustic wave filter has the advantages of low frequency temperature coefficient, low Rayleigh wave parasitic response phenomenon, stable working performance, long service life and the like. Moreover, the preparation method is controllable in process conditions, and can effectively ensure that the prepared surface acoustic wave filter with high temperature stability is stable in performance, high in yield and low in cost.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a surface acoustic wave filter with high temperature stability and its preparation method and application. Background technique [0002] Surface acoustic waves refer to the propagation of sound waves on the surface of elastomers, and this wave is called elastic surface acoustic waves. Surface acoustic waves travel about 100,000 times slower than electromagnetic waves. Surface acoustic wave filters are generally made of piezoelectric materials such as quartz crystals and piezoelectric ceramics, and are a special filtering device made by utilizing their piezoelectric effect and the physical characteristics of surface acoustic wave propagation. The so-called piezoelectric effect is the phenomenon that when the crystal is subjected to mechanical action, an electric field proportional to the pressure will be generated. Crystals with piezoelectric effect, when su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/64
CPCH03H3/02H03H9/02543H03H9/02614H03H9/02661H03H9/02834H03H9/64H03H2003/023H03H2003/026
Inventor 刘绍侃蒋燕港卢翠李强
Owner BEIJING ZHONGXUN SIFANG SCI & TECH
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