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High dielectric microwave dielectric ceramic material and preparation method thereof

A microwave dielectric ceramic and high-dielectric technology, which is applied in the field of high-dielectric Ca-Li-Nd-Ti-based microwave dielectric ceramic materials and its preparation, can solve the problems of restricting large-scale applications and the frequency temperature coefficient cannot meet actual needs, and achieve Effects of improved performance, reduced temperature coefficient of resonance frequency, and high dielectric constant

Inactive Publication Date: 2018-07-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Ca 0.35 Li 0.25 Nd 0.35 TiO 3 The quality factor is small and the frequency temperature coefficient is large, which cannot meet the actual needs
More importantly, the above CaO-Li 2 O-Ln 2 o 3 -TiO 2 Both systems need to press samples under isostatic pressing conditions, which also limits their large-scale application in the modern electronics industry

Method used

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  • High dielectric microwave dielectric ceramic material and preparation method thereof
  • High dielectric microwave dielectric ceramic material and preparation method thereof
  • High dielectric microwave dielectric ceramic material and preparation method thereof

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Embodiment

[0035] A high dielectric and low loss microwave dielectric ceramic material substituted by a B position, the general chemical formula is (Ca 0.35 Li 0.25 Nd 0.35 )(Ti 1- x D. x )O 3 , where 0.01≤x≤0.05, the composition of D is VW, V represents Ta with a valence state higher than tetravalent, W represents a valence state lower than tetravalent and the average ionic radius is close to Ti 4+ Single or multiple elements of V and W are substituted simultaneously or individually. When substituted alone, W is one of Al, Ga, Mg, Zn, Ni, or D is directly Ta. When VW is substituted at the same time, if W is one of Al and Ga, then the molar ratio V:W=1:1, if W is one of Mg, Zn, Ni, then the molar ratio V:W= 2:1.

[0036] The crystal phase of the microwave dielectric ceramic material is an orthorhombic perovskite structure. The relative permittivity ε of the microwave dielectric ceramic material r Between 120 and 140, the Q×f value is between 2700 and 4000GHz, and the resonant f...

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Abstract

The present invention provides a high dielectric microwave dielectric ceramic material, the general chemical formula of the material is (Ca0.35Li0.25Nd0.35)(Ti1-xDx)O3, wherein 0.01≤x≤0.05, the composition of D is VW, and V represents the valence state Higher than tetravalent Ta, W represents a single or multiple elements whose valence is lower than tetravalent and the average ionic radius is close to Ti4+, V and W can be substituted simultaneously or separately; the present invention also provides a high dielectric microwave dielectric ceramic The preparation method of the material comprises the steps of: batching, ball milling, drying and sieving, pre-calcination, granulation, compression molding, and sintering; the material prepared by the invention has a high dielectric constant and a relatively high Q×f value, and can be adjusted Frequency temperature coefficient. The formula does not contain volatile toxic metals such as Pb and Cd, and has stable performance, which can meet the application requirements of modern microwave devices. The raw materials are abundantly supplied in China and the price is relatively low, which makes it possible to reduce the cost of high-performance microwave ceramics.

Description

technical field [0001] The invention belongs to the technical field of electronic information functional materials and devices, and specifically relates to a high-dielectric Ca-Li-Nd-Ti-based microwave dielectric ceramic material with adjustable frequency temperature coefficient and a preparation method thereof, which can be used for making modern mobile communication and Microwave components such as dielectric resonators, dielectric filters, dielectric substrates, and dielectric antennas in Internet of Things technology. Background technique [0002] At present, information technology is developing rapidly in the direction of high frequency, high power, integration, and multi-function, and with the rapid development of modern mobile communication technology and Internet of Things technology, high-frequency microwave There are extensive and important applications in systems such as sensing Internet of Things radio frequency technology. Among them, radio frequency identifica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/46C04B35/622C04B35/64
CPCC04B35/46C04B35/622C04B35/64C04B2235/3203C04B2235/3208C04B2235/3217C04B2235/3231C04B2235/3251C04B2235/3286C04B2235/725
Inventor 唐斌方梓烜孙成礼钟朝位张树人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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