Application of ion gel in graphene transfer and graphene transistor fabrication, graphene transistor and fabrication method of graphene transistor

Abstract

The invention relates to the technical field of graphene, and discloses application of ion gel in graphene transfer and graphene transistor fabrication, a graphene transistor and a fabrication methodof the graphene transistor. An ion liquid and an initiator are contained in the ion gel, and the ion liquid comprises 1-ethyl-3-methylimidazole-bi (trifluoromethanesulfonic acid) imidazole and a polyethylene glycol diacrylate monomer. By using the ion gel to do graphene transfer, the ion gel is not needed to be removed, capture trap formed by PMMA residue on graphene is solved, the cost is reduced, and a poisonous solvent is prevented from being used; and the ion gel is large in elastic modulus, and a gap is difficult to generate. Moreover, in the graphene transistor fabricated by the method,the ion gel is directly used as a gate dielectric layer, fabrication of the gate dielectric layer is not needed to be independently performed, and the process is simplified; and in the obtained graphene transistor, a threshold voltage and hysteresis both are reduced, the source current is increased under the same gate voltage, and the mobFabrication method of array substrate and array substrateility is improved.

Description

technical field [0001] The invention relates to the technical field of graphene, in particular to the application of ion gel in graphene transfer and preparation of graphene transistors, graphene transistors and preparation methods thereof. Background technique [0002] In recent years, graphene has been favored for its excellent electrical, optical, magnetic and mechanical properties. Among them, the monoatomic layer thickness of single-layer graphene endows it with excellent transparency and flexibility. Therefore, single-layer graphene is widely used in flexible transparent electrodes, transistor semiconductors, radio frequency, sensor active materials, etc. [0003] Graphene is generally grown on a metal substrate by CVD, and it needs to be transferred to the target substrate for transistor fabrication. The transfer method is divided into dry transfer and wet transfer. Dry transfer is costly and difficult, and is rarely used. And wet transfer is more common, at prese...

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Problems solved by technology

[0005] 1. After the transfer of graphene, PMMA cannot be completely removed, and PMMA residues will form traps on graphene, which will affect the performance of transistors prepared from it;

[0006] 2. PMMA has a small elastic modulus, which makes cracks prone to appear during the transfer process, resulting in narrowing of the effective width of the transistor channel, or even breaking the circuit, which affects the performance of the prepared transistor;

[0007] 3. The process is complicated, the process is long, and the cost is high

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