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A kind of single crystal single domain piezoelectric thin film and preparation method thereof

A technology of piezoelectric thin film and single crystal, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc. The effect of simple process and cost reduction

Active Publication Date: 2021-09-24
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not suitable for the production of thin-film substrate materials. The reason is that electrodes need to be applied on both sides of each piece. The cost of mass production and application is high, and the process is cumbersome, so mass production cannot be realized; in addition, due to the silicon substrate and the The thermal expansion coefficients of lithium niobate and lithium tantalate are quite different, and the film is easily broken when heated above the Curie temperature

Method used

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  • A kind of single crystal single domain piezoelectric thin film and preparation method thereof
  • A kind of single crystal single domain piezoelectric thin film and preparation method thereof

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preparation example Construction

[0038] The present invention also includes a method for preparing a single crystal single domain piezoelectric film, comprising the following steps:

[0039] Preparation of composite films;

[0040] Put the composite film into an annealing furnace at 450 to 590°C for 5 to 30 minutes; or, put the composite film into the annealing furnace to heat up and anneal, and use an ion gun to spray charged ions on the surface of the composite film during the heating process to obtain a single crystal Monodomain Piezo Films.

[0041] The composite thin film of the present invention can be all existing single crystal thin films, such as lithium niobate thin film, lithium tantalate thin film, etc., and single crystal single domain thin film can be obtained by the method described in the present invention.

[0042] Preferably, the composite film is put into an annealing furnace during the heating and annealing process, and the temperature is raised to 450-590° C., and the heating rate is 2-1...

Embodiment 1

[0057] A single-crystal single-domain piezoelectric film, comprising a single-crystal film layer, a silicon dioxide layer, a dielectric layer and a single-crystal silicon layer in turn; wherein the material of the single-crystal film layer is single-crystal lithium niobate, and the ferroelectric domain is a single-domain , the piezoelectric coefficient is 98% to 100% of the bulk material; the dielectric layer is the damaged layer of single crystal silicon.

[0058] The single crystal lithium niobate in the material of the single crystal thin film layer can be replaced by single crystal lithium tantalate; the damaged layer of single crystal silicon in the dielectric layer can be replaced by amorphous silicon or polycrystalline silicon.

Embodiment 2

[0060] A single-crystal single-domain piezoelectric film, comprising a single-crystal film layer, a silicon dioxide layer, a dielectric layer and a single-crystal silicon layer in turn; wherein the material of the single-crystal film layer is single-crystal lithium niobate, and the ferroelectric domain is a single-domain , the piezoelectric coefficient is 98% to 100% of the bulk material; the dielectric layer is the damaged layer of single crystal silicon.

[0061] The thickness of the single crystal thin film layer is 100 nm, the thickness of the silicon dioxide layer is 100 nm; the thickness of the dielectric layer is 100 nm, and the thickness of the single crystal silicon is 200 μm.

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Abstract

The invention discloses a single-crystal single-domain piezoelectric film and a preparation method thereof. The single-crystal single-domain piezoelectric film sequentially comprises a single-crystal film layer, a silicon dioxide layer, a dielectric layer and a single-crystal silicon layer; wherein the single-crystal film layer The material is single crystal lithium niobate or single crystal lithium tantalate; the dielectric layer is a damaged layer of single crystal silicon, amorphous silicon or polysilicon; the piezoelectric coefficient of the single crystal single domain piezoelectric thin film of the present invention is 98% of that of the bulk material %~100%, while the piezoelectric coefficient of the existing technology is 10~90% of the bulk material, the piezoelectric performance of the single domain single crystal film is stable when used, the electromechanical coupling coefficient will not decrease, the device has wide bandwidth and low loss, Good consistency; the preparation method of the present invention has low cost, low energy consumption and high efficiency, is suitable for industrial production, and has a high yield; the silicon dioxide layer of tens of nanometers in the obtained film can achieve controllable thickness, small thickness deviation, The surface is smooth and has good uniformity, so the obtained device has good consistency.

Description

technical field [0001] The invention relates to the technical field of single crystal thin films, in particular to a single crystal single domain piezoelectric thin film and a preparation method thereof. Background technique [0002] Lithium niobate and lithium tantalate single crystal thin films are widely used in acoustic wave devices, optical signal processing, information storage and electronic devices, etc. As basic materials, large broadband, low temperature drift, low loss acoustic wave devices and High-frequency, high-bandwidth, large-capacity optoelectronic devices and integrated optical circuit chips. [0003] Although the single crystal films of lithium niobate and lithium tantalate prepared by the method of ion implantation and exfoliation are single crystals in crystal structure, part of the polarization domains are reversed, so the piezoelectric substrates prepared in this way will be more complex. Domain single crystal. The multi-domain single crystal will d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187H01L41/253H01L41/257
CPCH10N30/8542H10N30/04H10N30/045
Inventor 李真宇胡文张秀全罗具廷杨超
Owner JINAN JINGZHENG ELECTRONICS
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