A polymer-assisted epitaxial growth bifeo 3 Multiferroic Thin Film Method

A polymer-assisted, epitaxial growth technology, applied in the field of epitaxially grown BiFeO3 multiferroic thin films, to achieve the effects of high epitaxy, large room temperature electric polarization, and compact structure

Active Publication Date: 2022-02-01
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is no solution method to prepare epitaxial growth BiFeO 3 Related reports on multiferroic thin films

Method used

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  • A polymer-assisted epitaxial growth bifeo <sub>3</sub> Multiferroic Thin Film Method
  • A polymer-assisted epitaxial growth bifeo <sub>3</sub> Multiferroic Thin Film Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] BiFeO 3 The preparation of epitaxial film, the steps are as follows:

[0032] 1. Configuration of precursor solution

[0033] Bi(NO 3 ) 3 ∙5H 2 O solid powder was added to glacial acetic acid (CH 3 COOH) (Bi: glacial acetic acid molar ratio is 1:8), continue to stir on a magnetic stirrer for 7-9h, and keep the temperature at 45-50°C until the solution is a very viscous transparent solution, which will be mixed with Bi( NO 3 ) 3 ∙5H 2 Fe(NO 3 ) 3 ∙9H 2 O was added to the solution, and the stirring was continued on a magnetic stirrer for 2 h until the Fe(NO 3 ) 3 ∙9H 2 O is completely dissolved, then add polyethylene glycol 20000 and polyethylene glycol 400 according to the molar ratio of bismuth ferrite: polyethylene glycol 20000: polyethylene glycol 400 = 1: 0.01%: 0.01%, and finally add an equal volume ratio Dilute the solution of ethylene glycol and ethylene glycol methyl ether into the BiFeO 3 The concentration of the solution is 0.23 mol / L. After full...

Embodiment 2

[0043] BiFeO 3 The preparation of thin film, steps are as follows:

[0044] 1. Configuration of precursor solution

[0045] With embodiment 1.

[0046] 2. Coating machine throwing film

[0047] (100) Nb:SrTiO 3 The substrate was put into a tube furnace for heat treatment at 700 °C for 30 minutes, then kept at 80 °C and placed in a glue homogenizer, and kept at a humidity range of 14-17%, then the precursor solution was coated on the substrate, passed A single-layer film was prepared by spin coating; wherein, the first layer of film was spun off at a speed of 7000rpm for 2 minutes, and the film thickness was about 11-15 nm; the second-third layer of film was spun off at a speed of 5000rpm for 2 1 minute, the film thickness is about 19-24nm, and the other layers of film are thrown at a speed of 6000rpm for 2 minutes to ensure that the film thickness is about 14-18nm;

[0048] 3. Heat treatment

[0049] With embodiment 1.

[0050] 4. Repeat the above steps 2 and 3 several ...

Embodiment 3

[0053] BiFeO 3 The preparation of thin film, steps are as follows:

[0054] 1. Configuration of precursor solution

[0055] With embodiment 1.

[0056] 2. Coating machine throwing film

[0057] (100) Nb:SrTiO 3 The substrate is placed in a tube furnace at 700 o C under heat treatment for 30 minutes, then keep the temperature at 80 o C and put it into a homogenizer, keep the humidity range at 14-17%, then apply the precursor solution on the substrate, and prepare a single-layer film by spin coating; wherein, the first layer of film is thrown at a speed of 6000rpm , the time is 2 minutes, the film thickness is about 14-18 nm; the 2-3 layer film is spun at a speed of 4000rpm, the time is 1 minute, the film thickness is about 22-26nm, and the other layers are spun at a speed of 5000rpm , the time is 1 minute, and the film thickness is guaranteed to be around 19-24;

[0058] 3. Heat treatment

[0059] With embodiment 1.

[0060] 4. Repeat the above steps 2 and 3 several ti...

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Abstract

The invention discloses a polymer-assisted epitaxial growth of BiFeO 3 The method for multiferroic thin film, comprises: preparation precursor solution, in (100)SrTiO 3 or (100)Nb:SrTiO 3 On the substrate, the thin film is prepared by layer-by-layer annealing process, the temperature of each layer of thin film is 70-90°C, and the humidity when the film is flung is 11-20%. The method of the present invention is very convenient to implement, the stoichiometric ratio of raw materials can be precisely controlled, the requirements for experimental equipment are not high, the cost is low, the degree of epitaxy of the obtained film is high, the electric polarization strength at room temperature is large, the leakage current density at room temperature is low, and the structure is compact , Uniform, single-crystal performance in a local small area, excellent dielectric, electrical and magnetic properties, suitable for the development of high-density non-volatile memory devices and other magnetoelectric coupling devices.

Description

technical field [0001] The invention relates to a kind of epitaxial growth BiFeO 3 A method for preparing a multiferroic film, specifically involving a polymer-assisted high-quality epitaxial growth of BiFeO 3 multiferroic thin film method. Background technique [0002] Multiferroic materials refer to functional materials containing two or more "ferroic" properties in the material, mainly ferroelectricity, ferromagnetism (or antiferromagnetism) and ferroelasticity. The coexistence and mutual coupling of multiple ferroic materials enriches the application of multiferroic materials, such as high-speed information storage, current measurement, sensor, inductor, and converter manufacturing. The application of single-phase multiferroic materials, especially the multiferroic materials at and above room temperature is even more important. [0003] Single-phase multiferroic materials do not require complex preparation methods and are more advantageous in preparation. However, si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00B82Y30/00B82Y40/00
CPCC01G49/0081B82Y30/00B82Y40/00C01P2002/72C01P2006/40
Inventor 杨锋刘芬林延凌季凤岐
Owner UNIV OF JINAN
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