Use of bottom gate bottom contact structure device for constructing biosensor

A biosensor and gate technology, applied in the field of biosensors, can solve problems such as stability and selectivity to be improved, increased financial and material consumption, and various types of cancer markers.

Inactive Publication Date: 2019-10-29
TIANJIN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the overall performance of this type of sensor, especially the stability and selectivity shown when detecting solution-phase substances, needs to be improved.
At the same time, human cancers are diverse, and the types of different cancer markers are complex. The traditional method of one-by-one detection greatly increases the consumption of financial and material resources, which is also a challenge in promoting practical applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Use of bottom gate bottom contact structure device for constructing biosensor
  • Use of bottom gate bottom contact structure device for constructing biosensor
  • Use of bottom gate bottom contact structure device for constructing biosensor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0079] The preparation method of the silane coupling agent solution is as follows: add the silane coupling agent to the ethanol aqueous solution and mix uniformly to obtain the silane coupling agent solution, wherein the ratio of ethanol to water in the ethanol aqueous solution is 95:5 by volume. ; In terms of parts by volume, the ratio of silane coupling agent to ethanol aqueous solution is 1:99;

[0080] The preparation method of GO solution is: in a beaker, add 40 volume parts of concentrated H 2 SO 4 And 2 parts by mass of NaNO 3 Mix well, react for 15min under ice bath conditions (the temperature of ice bath conditions is 3℃), and wait until concentrated H 2 SO 4 (Concent H 2 SO 4 The concentration is 98wt%) and NaNO 3 When the temperature of the mixture is lower than 5℃, add 2 parts by mass of graphite powder of 8000 mesh to the mixture and stir for 15 minutes to mix evenly, then add 7 parts by mass of KMnO 4 , React at room temperature 20~25℃ for 2h, then react in 35℃ water ...

Embodiment 1～4

[0089] The method for preparing the above-mentioned fully covalently bonded fully reduced graphene oxide field effect transistor includes the following steps:

[0090] Step 1. In an oxygen environment, use plasma to 2 The silicon wafers of the layer are processed for 10 minutes; the oxygen environment is realized by introducing a 20sccm oxygen gas flow, and the plasma is used to treat the SiO 2 The rf power of the layer of silicon wafer processing is 200W.

[0091] Step 2. The GO layer is prepared for the first time: Repeat the method of preparing a GO monolayer on the silicon wafer obtained in step 1 for 5 times, so that the SiO 2 A GO layer composed of multiple GO single layers is formed on the layer;

[0092] Step 3. Put the silicon wafer obtained in step 2 in a tube furnace in a reducing atmosphere in T 1 Keep the temperature at ℃ for 12h to obtain the silicon wafer loaded with RGO layer; the heating rate of the tube furnace is 5℃ / min.

[0093] Step 4. Paste a mask on the silicon w...

Embodiment 5

[0101] A method for constructing a biosensor by fully covalently connecting fully reduced graphene oxide field effect transistors, including the following steps:

[0102] 1) Using a source electrode and a drain electrode as a FET, 10μL of crosslinking agent solution (solvent is 1×) is added dropwise to the surface of a FET with a fully covalently bonded fully reduced graphene oxide field effect transistor obtained in Example 1. PBS) and incubate for 0.5h. Wash the surface of the fully covalently connected fully reduced graphene oxide field-effect transistor 3 times with phosphate buffered saline solution (0.1×PBS), where the crosslinker in the crosslinker solution is pentylene The volume concentration of dialdehyde and glutaraldehyde in the crosslinking agent solution is 3%;

[0103] 2) Drop the antibody solution onto the surface of the FET and incubate at room temperature 20~25°C for 1 hour, where the volume of the antibody solution is 5μL, and the antibody solution (solvent is 1×...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses the use of a bottom gate bottom contact structure device for constructing a biosensor. A method comprises the steps of dropwise adding a cross-linking agent solution to a fullycovalently bonded fully reduced graphene oxide field effect transistor and incubating the FET, and rinsing the surface of the FET with a phosphate buffered saline solution; dropwise adding an antibody solution to the surface of the FET and incubating the FET at room temperature for 1 to 2 hours; rinsing the surface of the FET with the phosphate buffered saline solution, and dropwise adding a sealing agent to the surface of the FET for reacting; rinsing the surface of the FET with the phosphate buffered saline solution, drying the FET at room temperature for at least 2s, and then testing the transfer curve of the FET and obtaining a Dirac point value D1; dropwise adding a solution to be tested to the surface of the FET, incubating the FET at room temperature for 1-3 hours, rinsing the surface the FET with the phosphate buffered saline solution, drying the FET at room temperature for at least 2s, testing the transfer curve and obtaining a Dirac point value D2; and calculating [delta]D =D2-D1 and recording the [delta]D as an sensor output signal. The biosensor can achieve a purpose of simultaneously detecting different kinds of cancer markers.

Description

Technical field [0001] The present invention belongs to the technical field of biosensors, and specifically relates to the application of a bottom-gate bottom contact structure device in the construction of biosensors. Background technique [0002] Early diagnosis of cancer can realize early detection and early treatment of cancer, thereby significantly improving the targeted treatment and the survival rate of patients. At present, in clinical diagnosis, the detection of cancer markers is recognized as an effective early cancer diagnosis method. Graphene-based field-effect transistors are considered to be effective carriers for constructing immunosensors, which can meet the needs of real-time detection that is inexpensive, non-marking, and fast and simple. However, the overall performance of this type of sensor, especially the stability and selectivity shown in the detection of solution phase substances, needs to be improved. At the same time, human cancer diseases are diverse,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N33/574
CPCG01N33/57484
Inventor 程姗姗张丛丛胡文平王利维王勇卢小泉司珂
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap