Bottom gate bottom contact structure device and preparation method thereof

A conditional, silicon wafer technology, applied in the field of bottom-gate and bottom-contact structure devices and its preparation, can solve the problems of various types of cancer markers, increased consumption of financial and material resources, stability and selectivity to be improved, etc.

Inactive Publication Date: 2019-10-29
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the overall performance of this type of sensor, especially the stability and selectivity shown when detecting solution-phase substances, needs to be improved.
At the same time, human cancers are diverse, and the types of different cancer markers are complex. The traditional method of one-by-one detection greatly increases the consumption of financial and material resources, which is also a challenge in promoting practical applications.

Method used

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  • Bottom gate bottom contact structure device and preparation method thereof
  • Bottom gate bottom contact structure device and preparation method thereof
  • Bottom gate bottom contact structure device and preparation method thereof

Examples

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preparation example Construction

[0079] The preparation method of the silane coupling agent solution is as follows: add the silane coupling agent to the ethanol aqueous solution, and mix uniformly to obtain the silane coupling agent solution, wherein, in parts by volume, the ratio of ethanol to water in the ethanol aqueous solution is 95:5 ; In parts by volume, the ratio of silane coupling agent to ethanol aqueous solution is 1:99;

[0080] The preparation method of GO solution is as follows: in a beaker, 40 parts by volume of concentrated H 2 SO 4 and 2 parts by mass of NaNO 3 Mix evenly, react for 15min under ice bath conditions (the temperature of ice bath conditions is 3°C), and wait until concentrated H 2 SO 4 (concentrated H 2 SO 4 The concentration is 98wt%) and NaNO 3 When the temperature of the mixture is lower than 5°C, add 2 parts by mass of graphite powder of 8000 mesh and stir for 15 minutes to mix evenly, then add 7 parts by mass of KMnO 4 , react at room temperature 20-25°C for 2h, then ...

Embodiment 1～4

[0089] The preparation method of the above-mentioned fully covalently bonded fully reduced graphene oxide field effect transistor comprises the following steps:

[0090] Step 1, under oxygen environment, use plasma to carry SiO 2 The silicon wafer of layer is processed 10min; Oxygen environment is to pass into the oxygen flow of 20sccm to realize, use plasma to have SiO 2 The rf power when processing the silicon wafer of the first layer is 200W.

[0091] Step 2, prepare GO layer for the first time: Repeat the method of preparing GO monolayer 5 times on the silicon wafer obtained in step 1, to 2 A GO layer consisting of multiple GO monolayers is formed on the layer;

[0092] Step 3, under the condition of reducing atmosphere, place the silicon chip obtained in step 2 in a tube furnace at T 1 °C for 12 hours to obtain a silicon wafer loaded with an RGO layer; the heating rate of the tube furnace was 5 °C / min.

[0093] Step 4, paste the mask plate on the silicon wafer loaded ...

Embodiment 5

[0101] A method for constructing a biosensor by fully covalently connecting fully reduced graphene oxide field-effect transistors, comprising the following steps:

[0102] 1) With a source electrode and a drain electrode as a FET, 10 μL of cross-linking agent solution (solvent is 1× PBS) and incubated for 0.5h, rinsed the surface of the fully covalently bonded fully reduced graphene oxide field-effect transistor with phosphate buffered saline solution (0.1×PBS), wherein, the crosslinking agent in the crosslinking agent solution was pentamethylene Dialdehyde, the volume concentration of glutaraldehyde in the crosslinking agent solution is 3%;

[0103] 2) Add the antibody solution dropwise on the surface of the FET and incubate at room temperature 20-25° C. for 1 h, wherein the volume of the antibody solution is 5 μL, and the concentration of the antibody in the antibody solution (solvent is 1×PBS) is 100 μg mL -1 K and K are shown in Table 2 for details.

[0104] 3) Rinse the...

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Abstract

The invention discloses a bottom gate bottom contact structure device and a preparation method thereof. The bottom gate bottom contact structure device comprises: a silicon wafer with an SiO2 layer, multiple pairs of RGO layers, and a semi-RGO layer, wherein the SiO2 layer is loaded onto the silicon wafer (Si) used as a gate; each pair of RGO layers has two RGO layers which are used as the sourceand the drain of a FET on a fully covalently bonded fully reduced graphene oxide field effect transistor; the two RGO layers are in parallel with each other and located onto the SiO2 layer; and the semi-RGO layer is located onto the RGO layers and the SiO2 layer around the RGO layers and serves as a semiconductor layer. The full covalently bonded fully reduced graphene oxide field effect transistor can satisfy the requirement of providing quick and simple real-time detection with low cost and no label, and provides a new idea for solution phase detection.

Description

technical field [0001] The invention belongs to the technical field of biosensors, and in particular relates to a device with a bottom-gate-bottom-contact structure and a preparation method thereof. Background technique [0002] Early diagnosis of cancer can realize early detection and early treatment of cancer, thereby significantly improving the pertinence of treatment and the survival rate of patients. Currently in clinical diagnosis, detection of cancer markers is recognized as an effective method for early diagnosis of cancer. Graphene-based field-effect transistors are considered to be an effective carrier for the construction of immunosensors, which can meet the needs of providing cheap, label-free, fast and easy real-time detection. However, the overall performance of this type of sensor, especially the stability and selectivity shown when detecting solution phase substances, needs to be improved. At the same time, there are many kinds of human cancer diseases, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N33/574
CPCG01N33/57484
Inventor 程姗姗张丛丛胡文平王利维王勇卢小泉司珂
Owner TIANJIN UNIV
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